TY - JOUR
T1 - A 144-MHz Fully Integrated Resonant Regulating Rectifier with Hybrid Pulse Modulation for mm-Sized Implants
AU - Kim, Chul
AU - Ha, Sohmyung
AU - Park, Jiwoong
AU - Akinin, Abraham
AU - Mercier, Patrick P.
AU - Cauwenberghs, Gert
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/11
Y1 - 2017/11
N2 - This paper presents a fully integrated resonant regulating rectifier (IR3) with an on-chip coil used to wirelessly power mm-sized implants. By combining rectification and regulation in a single stage, and controlling this stage via a hybrid pulse-width modulation and pulse-frequency modulation (PFM) feedback scheme, the IR3 avoids efficiency-limiting cascaded losses while enabling tight voltage regulation with low dropout and ripple. The IR3 is implemented in 0.078 mm2 of active area in 180-nm Silicon oxide insulator (SOI) CMOS, and achieves a 1.87% ΔVDD/VDD power supply regulation ratio with a 1-nF decoupling capacitor despite a tenfold load current variation from 8 to 80 μA. A 0.8-V VDD is maintained at a 8-kΩ load for 144-MHz RF inputs ranging from 0.98 to 1.5 V. At 1-V regulation, the voltage conversion efficiency is greater than 92% with less than 5.2-mVpp ripple, while the power conversion efficiency is 54%. The measured overall wireless power transfer system efficiency, from the primary coil to VDD output of the IR3, is 2% at 160-μW load, and reaches 5% at 700 μW.
AB - This paper presents a fully integrated resonant regulating rectifier (IR3) with an on-chip coil used to wirelessly power mm-sized implants. By combining rectification and regulation in a single stage, and controlling this stage via a hybrid pulse-width modulation and pulse-frequency modulation (PFM) feedback scheme, the IR3 avoids efficiency-limiting cascaded losses while enabling tight voltage regulation with low dropout and ripple. The IR3 is implemented in 0.078 mm2 of active area in 180-nm Silicon oxide insulator (SOI) CMOS, and achieves a 1.87% ΔVDD/VDD power supply regulation ratio with a 1-nF decoupling capacitor despite a tenfold load current variation from 8 to 80 μA. A 0.8-V VDD is maintained at a 8-kΩ load for 144-MHz RF inputs ranging from 0.98 to 1.5 V. At 1-V regulation, the voltage conversion efficiency is greater than 92% with less than 5.2-mVpp ripple, while the power conversion efficiency is 54%. The measured overall wireless power transfer system efficiency, from the primary coil to VDD output of the IR3, is 2% at 160-μW load, and reaches 5% at 700 μW.
KW - mm-sized implant
KW - on-chip coil
KW - pulse-frequency modulation
KW - pulse-width modulation (PWM)
KW - regulating rectifier
KW - wireless power transfer (WPT)
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U2 - 10.1109/JSSC.2017.2734901
DO - 10.1109/JSSC.2017.2734901
M3 - Article
AN - SCOPUS:85028455260
SN - 0018-9200
VL - 52
SP - 3043
EP - 3055
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
IS - 11
M1 - 8013680
ER -