TY - GEN
T1 - A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation
AU - Kim, Chul
AU - Ha, Sohmyung
AU - Park, Jiwoong
AU - Akinin, Abraham
AU - Mercier, Patrick P.
AU - Cauwenberghs, Gert
N1 - Publisher Copyright:
© 2015 JSAP.
PY - 2015/8/31
Y1 - 2015/8/31
N2 - This paper presents a CMOS fully-integrated resonant regulating rectifier (IR3) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR3 achieves 1.87% of ΔVDD/VDD ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mVpp ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR3 circuit occupies 0.078mm2 active area.
AB - This paper presents a CMOS fully-integrated resonant regulating rectifier (IR3) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR3 achieves 1.87% of ΔVDD/VDD ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mVpp ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR3 circuit occupies 0.078mm2 active area.
UR - http://www.scopus.com/inward/record.url?scp=84957868299&partnerID=8YFLogxK
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U2 - 10.1109/VLSIC.2015.7231292
DO - 10.1109/VLSIC.2015.7231292
M3 - Conference contribution
AN - SCOPUS:84957868299
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - C284-C285
BT - 2015 Symposium on VLSI Circuits, VLSI Circuits 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015
Y2 - 17 June 2015 through 19 June 2015
ER -