A comprehensive study of growth techniques and characterization of epitaxial Ge1-xCx (111) layers grown directly on Si (111) for MOS applications

Mustafa Jamil, Joseph P. Donnelly, Se Hoon Lee, Davood Shahrjerdi, Tank Akyol, Emanuel Tutuc, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Chemical Compounds

Physics & Astronomy