Abstract
A photodetector based on the few-layered GaGeTe is demonstrated. It exhibits a broadband spectral response ranging from UV to NIR. A high responsivity of 1.5 A/W at 1310 nm and 750 A/W at 404 nm is measured. Furthermore, the devices is very stability under ambient condition which makes GaGeTe excellent candidate for UV to NIR optoelectronics application.
Original language | English (US) |
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Article number | JW1A.123 |
Journal | Optics InfoBase Conference Papers |
State | Published - 2021 |
Event | CLEO: QELS_Fundamental Science, CLEO: QELS 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States Duration: May 9 2021 → May 14 2021 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials