We study the dynamics of the carriers population in semiconductor heterostructures represented by a three level asymmetric double quantum well, a-DQW, by combining a classical phenomenological macroscopic description with a microscopic quantum mechanical one. We first perform a detailed microscopic many body calculation of the decay and emission rates in terms of the self-energies associated to the main interaction mechanisms. With the calculated microscopic decay rates we construct a dynamical system for the carrier populations at three energy levels in the form of a Boltzman transport equation, BTE. We also introduce new fluxes of carrier particles due to the tunnel-coupling of the two wells of the a-DQW. Our modified BTE exhibits different solutions depending on the microscopically calculated decay and emission rates. These rates depend on several parameters, in particular on the geometry of the a-DQW. For certain time scales the model shows oscillations of the carrier densities which are interpreted as dipole oscillations generating Tera-Hertz radiation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics