A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics

Srinivasa R. Tamalampudi; Ghada Dushaq; Juan E. Villegas; Bruna Paredes; Mahmoud S. Rasras

doi:10.1109/JLT.2023.3237818

A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics

Srinivasa R. Tamalampudi, Ghada Dushaq, Juan E. Villegas, Bruna Paredes, Mahmoud S. Rasras

Research output: Contribution to journal › Article › peer-review

Abstract

Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation is observed. The corresponding wavelength shift and half-wave voltage length product <inline-formula><tex-math notation="LaTeX">$(V_{\pi} . l)$</tex-math></inline-formula> for the TE polarization are -1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to - 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.

Original language	English (US)
Pages (from-to)	1-7
Number of pages	7
Journal	Journal of Lightwave Technology
DOIs	https://doi.org/10.1109/JLT.2023.3237818
State	Accepted/In press - 2023

Keywords

Modulator
Optical device fabrication
Optical imaging
Optical polarization
Optical refraction
Optical variables control
Optical waveguides
Phase Shifter
Ring Resonator
Silicon
Silicon Photonics
Van der Waals Anisotropic GaGeTe

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1109/JLT.2023.3237818

Cite this

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title = "A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics",

abstract = "Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation is observed. The corresponding wavelength shift and half-wave voltage length product $(V_{\pi} . l)$ for the TE polarization are -1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to - 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.",

keywords = "Modulator, Optical device fabrication, Optical imaging, Optical polarization, Optical refraction, Optical variables control, Optical waveguides, Phase Shifter, Ring Resonator, Silicon, Silicon Photonics, Van der Waals Anisotropic GaGeTe",

author = "Tamalampudi, {Srinivasa R.} and Ghada Dushaq and Villegas, {Juan E.} and Bruna Paredes and Rasras, {Mahmoud S.}",

note = "Publisher Copyright: Author",

year = "2023",

doi = "10.1109/JLT.2023.3237818",

language = "English (US)",

pages = "1--7",

journal = "Journal of Lightwave Technology",

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AU - Tamalampudi, Srinivasa R.

AU - Dushaq, Ghada

AU - Villegas, Juan E.

AU - Paredes, Bruna

AU - Rasras, Mahmoud S.

N1 - Publisher Copyright: Author

PY - 2023

Y1 - 2023

N2 - Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation is observed. The corresponding wavelength shift and half-wave voltage length product $(V_{\pi} . l)$ for the TE polarization are -1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to - 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.

AB - Electrically tunable devices contribute significantly to key functions of photonics integrated circuits. Here, we demonstrate the tuning of the optical index of refraction based on hybrid integration of multi-layered anisotropic GaGeTe on a silicon micro-ring resonator (Si-MRR). Under static applied (DC) bias and transverse-electric (TE) polarization, the device exhibits a linear resonance shift without any amplitude modulation. However, for the transverse-magnetic (TM) polarization, both amplitude and phase modulation is observed. The corresponding wavelength shift and half-wave voltage length product $(V_{\pi} . l)$ for the TE polarization are -1.78 pm/V and 0.9 V.cm, respectively. These values are enhanced for the TM polarizations and correspond to - 6.65 pm/V and 0.28 V.cm, respectively. The dynamic radio frequency (RF) response of the devices was also tested at different bias conditions. Remarkably, the device exhibits a 1.6 MHz and 2.1 MHz response at 0 V and 7 V bias, respectively. Based on these findings, the integration of 2D GaGeTe on the silicon photonics platform has great potential for the next generation of integrated photonic applications such as switches and phase shifters.

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KW - Optical variables control

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KW - Phase Shifter

KW - Ring Resonator

KW - Silicon

KW - Silicon Photonics

KW - Van der Waals Anisotropic GaGeTe

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A Multi-layered GaGeTe Electro-Optic Device Integrated in Silicon Photonics

Abstract

Keywords

ASJC Scopus subject areas

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