A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja; Mark Lundstrom; Dimitri Antoniadis

doi:10.1109/IEDM.2014.7047172

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja, Mark Lundstrom, Dimitri Antoniadis

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

Original language	English (US)
Article number	7047172
Pages (from-to)	35.1.1-35.1.4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2015-February
Issue number	February
DOIs	https://doi.org/10.1109/IEDM.2014.7047172
State	Published - Feb 20 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. / Rakheja, Shaloo; Lundstrom, Mark; Antoniadis, Dimitri.

In: Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2015-February, No. February, 7047172, 20.02.2015, p. 35.1.1-35.1.4.

Research output: Contribution to journal › Conference article › peer-review

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