A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja, Mark Lundstrom, Dimitri Antoniadis

Research output: Contribution to journalConference article

Abstract

This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

Original languageEnglish (US)
Article number7047172
Pages (from-to)35.1.1-35.1.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Volume2015-February
Issue numberFebruary
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes'. Together they form a unique fingerprint.

  • Cite this