A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja; Mark Lundstrom; Dimitri Antoniadis

doi:10.1109/IEDM.2014.7047172

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja, Mark Lundstrom, Dimitri Antoniadis

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

Original language	English (US)
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	35.1.1-35.1.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047172
State	Published - Feb 20 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	12/15/14 → 12/17/14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2014.7047172

Cite this

Rakheja, S., Lundstrom, M., & Antoniadis, D. (2015). A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 35.1.1-35.1.4). Article 7047172 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047172

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. / Rakheja, Shaloo; Lundstrom, Mark; Antoniadis, Dimitri.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 35.1.1-35.1.4 7047172 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rakheja, S, Lundstrom, M & Antoniadis, D 2015, A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047172, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 35.1.1-35.1.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 12/15/14. https://doi.org/10.1109/IEDM.2014.7047172

Rakheja S, Lundstrom M, Antoniadis D. A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 35.1.1-35.1.4. 7047172. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047172

Rakheja, Shaloo ; Lundstrom, Mark ; Antoniadis, Dimitri. / A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 35.1.1-35.1.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

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AB - This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

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A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

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