A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja; Mark Lundstrom; Dimitri Antoniadis

doi:10.1109/IEDM.2014.7047172

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja, Mark Lundstrom, Dimitri Antoniadis

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

Original language	English (US)
Article number	7047172
Pages (from-to)	35.1.1-35.1.4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2015-February
Issue number	February
DOIs	https://doi.org/10.1109/IEDM.2014.7047172
State	Published - Feb 20 2015
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2014.7047172

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A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. / Rakheja, Shaloo; Lundstrom, Mark; Antoniadis, Dimitri.

In: Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2015-February, No. February, 7047172, 20.02.2015, p. 35.1.1-35.1.4.

Research output: Contribution to journal › Conference article › peer-review

@article{4f486e748ddd4b0badf1c5cb6500f240,

title = "A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes",

abstract = "This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.",

author = "Shaloo Rakheja and Mark Lundstrom and Dimitri Antoniadis",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

year = "2015",

month = feb,

day = "20",

doi = "10.1109/IEDM.2014.7047172",

language = "English (US)",

volume = "2015-February",

pages = "35.1.1--35.1.4",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "February",

}

TY - JOUR

T1 - A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

AU - Rakheja, Shaloo

AU - Lundstrom, Mark

AU - Antoniadis, Dimitri

PY - 2015/2/20

Y1 - 2015/2/20

N2 - This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

AB - This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

UR - http://www.scopus.com/inward/record.url?scp=84938220464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938220464&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2014.7047172

DO - 10.1109/IEDM.2014.7047172

M3 - Conference article

AN - SCOPUS:84938220464

VL - 2015-February

SP - 35.1.1-35.1.4

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

IS - February

M1 - 7047172

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

Y2 - 15 December 2014 through 17 December 2014

ER -

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

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