Abstract
This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.
| Original language | English (US) |
|---|---|
| Article number | 7047172 |
| Pages (from-to) | 35.1.1-35.1.4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Volume | 2015-February |
| Issue number | February |
| DOIs | |
| State | Published - Feb 20 2015 |
| Event | 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: Dec 15 2014 → Dec 17 2014 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Rakheja, S., Lundstrom, M., & Antoniadis, D. (2015). A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. Technical Digest - International Electron Devices Meeting, IEDM, 2015-February(February), 35.1.1-35.1.4. [7047172]. https://doi.org/10.1109/IEDM.2014.7047172