A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf, D. J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. E. Maes

Research output: Contribution to journalArticle

Abstract

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

Original languageEnglish (US)
Pages (from-to)1591-1594
Number of pages4
JournalMicroelectronics Reliability
Volume37
Issue number10-11
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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