A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf; D. J. Howard; M. Rasras; A. Lauwers; K. Maex; G. Groeseneken; H. E. Maes

doi:10.1016/S0026-2714(97)00117-0

A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf, D. J. Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. E. Maes

Research output: Contribution to journal › Article › peer-review

Abstract

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi₂ lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi₂. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi₂ in the lines.

Original language	English (US)
Pages (from-to)	1591-1594
Number of pages	4
Journal	Microelectronics Reliability
Volume	37
Issue number	10-11
DOIs	https://doi.org/10.1016/S0026-2714(97)00117-0
State	Published - 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0026-2714(97)00117-0

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title = "A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy",

abstract = "Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.",

author = "{De Wolf}, I. and Howard, {D. J.} and M. Rasras and A. Lauwers and K. Maex and G. Groeseneken and Maes, {H. E.}",

year = "1997",

doi = "10.1016/S0026-2714(97)00117-0",

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volume = "37",

pages = "1591--1594",

journal = "Microelectronics Reliability",

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T1 - A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

AU - De Wolf, I.

AU - Howard, D. J.

AU - Rasras, M.

AU - Lauwers, A.

AU - Maex, K.

AU - Groeseneken, G.

AU - Maes, H. E.

PY - 1997

Y1 - 1997

N2 - Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

AB - Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

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U2 - 10.1016/S0026-2714(97)00117-0

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SP - 1591

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 10-11

ER -

A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

Abstract

ASJC Scopus subject areas

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