A study of electrical and optical properties of boron-doped amorphous silicon deposited by RF-PECVD with different B2H6/H2 flow rates

G. Dushaq, N. El-Atab, M. Rasras, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The inherently disordered nature of amorphous silicon plays a major role in determining their fundamental characteristic. The electrical and optical properties of B- doped hydrogentated amorphous silicon (a-Si:H) thin films deposited using RF-PECVD have been studied. The diborane and hydrogen flow rates are changed during the film deposition. The incorporation of B-dopants and hydrogen on the a-Si band gap, resistivity and index of refraction are carried out using UV/VIS/INR spectrophotometer, hall measurements and variable angle ellipsometry, respectively. The findings of the present work explain the causal relationship between the atomic structures, the chemical environment of amorphous silicon, and the growth condition in changing the electrical and optical characteristic of a-Si:H. Furthermore, by understanding the structural hole trapping defects and optimizing the growth condition a high performance a-Si based devices can be achieved.

Original languageEnglish (US)
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsY. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
PublisherElectrochemical Society Inc.
Pages301-304
Number of pages4
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2016
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: May 29 2016Jun 2 2016

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period5/29/166/2/16

ASJC Scopus subject areas

  • Engineering(all)

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