TY - GEN
T1 - A study of electrical and optical properties of boron-doped amorphous silicon deposited by RF-PECVD with different B2H6/H2 flow rates
AU - Dushaq, G.
AU - El-Atab, N.
AU - Rasras, M.
AU - Nayfeh, A.
N1 - Funding Information:
We gratefully acknowledge financial support for this work provided by the Masdar Institute of Science and Technology, and the Office of Naval Research global grant N62909-16-1-2031
Publisher Copyright:
©The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - The inherently disordered nature of amorphous silicon plays a major role in determining their fundamental characteristic. The electrical and optical properties of B- doped hydrogentated amorphous silicon (a-Si:H) thin films deposited using RF-PECVD have been studied. The diborane and hydrogen flow rates are changed during the film deposition. The incorporation of B-dopants and hydrogen on the a-Si band gap, resistivity and index of refraction are carried out using UV/VIS/INR spectrophotometer, hall measurements and variable angle ellipsometry, respectively. The findings of the present work explain the causal relationship between the atomic structures, the chemical environment of amorphous silicon, and the growth condition in changing the electrical and optical characteristic of a-Si:H. Furthermore, by understanding the structural hole trapping defects and optimizing the growth condition a high performance a-Si based devices can be achieved.
AB - The inherently disordered nature of amorphous silicon plays a major role in determining their fundamental characteristic. The electrical and optical properties of B- doped hydrogentated amorphous silicon (a-Si:H) thin films deposited using RF-PECVD have been studied. The diborane and hydrogen flow rates are changed during the film deposition. The incorporation of B-dopants and hydrogen on the a-Si band gap, resistivity and index of refraction are carried out using UV/VIS/INR spectrophotometer, hall measurements and variable angle ellipsometry, respectively. The findings of the present work explain the causal relationship between the atomic structures, the chemical environment of amorphous silicon, and the growth condition in changing the electrical and optical characteristic of a-Si:H. Furthermore, by understanding the structural hole trapping defects and optimizing the growth condition a high performance a-Si based devices can be achieved.
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U2 - 10.1149/07202.0301ecst
DO - 10.1149/07202.0301ecst
M3 - Conference contribution
AN - SCOPUS:85010700139
T3 - ECS Transactions
SP - 301
EP - 304
BT - Dielectrics for Nanosystems 7
A2 - Misra, D.
A2 - Bauza, D.
A2 - Chen, Z.
A2 - Sundaram, K. B.
A2 - Obeng, Y. S.
A2 - Chikyow, T.
A2 - Iwai, H.
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
Y2 - 29 May 2016 through 2 June 2016
ER -