A unified charge-current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration

Shaloo Rakheja, Han Wang, Tomas Palacios, Inanc Meric, Kenneth Shepard, Dimitri Antoniadis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a compact virtual source (VS) model to describe carrier transport valid in both unipolar and ambipolar transport regimes in quasi-ballistic graphene field-effect transistors (GFETs). The model formulation allows for an easy extension to bilayer graphene transistors, where a bandgap can be opened. The model also includes descriptions of intrinsic terminal charges/capacitances obtained self-consistently with the transport formulation. The charge model extends from drift-diffusive transport regime to ballistic transport regime, where gradual-channel approximation (GCA) fails. The model is calibrated exhaustively against DC and S-parameter measurements of GFETs. To demonstrate the model capability for circuit-level simulations, the Verilog-A implementation of the model is used to simulate the dynamic response of frequency doubling circuits with GFETs operating in the ambipolar regime.

Original languageEnglish (US)
Title of host publication2013 IEEE International Electron Devices Meeting, IEDM 2013
Pages5.5.1-5.5.4
DOIs
StatePublished - 2013
Event2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
Duration: Dec 9 2013Dec 11 2013

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period12/9/1312/11/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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