@inproceedings{88bc9aea6194418e8fbf4b0a2e7f57a5,
title = "A unified charge-current compact model of gallium nitride transistors for RF and digital applications",
abstract = "We present an analytic model to capture the static and dynamic behavior of ultra-scaled III-nitride high electron mobility transistors as well as nanowire field-effect transistors. Excellent agreement of the model against measured data-sets is demonstrated over a broad range of bias and temperature conditions. The model is used for technology-device-circuit co-design for both RF and digital applications.",
keywords = "Compact modeling, III-nitride HEMTs, RF and digital application, nanowire FETs",
author = "Kexin Li and Shaloo Rakheja",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",
year = "2019",
month = mar,
doi = "10.1109/EDTM.2019.8731282",
language = "English (US)",
series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "279--281",
booktitle = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",
}