Absolute cross section for the formation of Si(1S) atoms following electron impact dissociation of SiH4

N. Abramzon, K. E. Martus, K. Becker

Research output: Contribution to journalArticle

Abstract

The formation of Si(1S) ground-state atoms from the neutral molecular dissociation of SiH4 by electron impact was studied. The formation absolute cross section was determined by electron scattering, coupled with laser-induced fluorescence measurements. A peak cross section of 4.5×10-17 cm2 was found at an impact energy of 60 eV, which when compared to a SiH4 neutral dissociation cross-section measured in a constant-flow plasma reactor, yields a branching ratio of about 0.037 for the formation process being studied. Absolute calibration is made relative to the cross-section of N2+(X) ground-state ions formation by electron impact on N2.

Original languageEnglish (US)
Pages (from-to)2250-2254
Number of pages5
JournalJournal of Chemical Physics
Volume113
Issue number6
DOIs
StatePublished - Aug 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Fingerprint Dive into the research topics of 'Absolute cross section for the formation of Si(<sup>1</sup>S) atoms following electron impact dissociation of SiH<sub>4</sub>'. Together they form a unique fingerprint.

  • Cite this