Abstract
The formation of Si(1S) ground-state atoms from the neutral molecular dissociation of SiH4 by electron impact was studied. The formation absolute cross section was determined by electron scattering, coupled with laser-induced fluorescence measurements. A peak cross section of 4.5×10-17 cm2 was found at an impact energy of 60 eV, which when compared to a SiH4 neutral dissociation cross-section measured in a constant-flow plasma reactor, yields a branching ratio of about 0.037 for the formation process being studied. Absolute calibration is made relative to the cross-section of N2+(X) ground-state ions formation by electron impact on N2.
Original language | English (US) |
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Pages (from-to) | 2250-2254 |
Number of pages | 5 |
Journal | Journal of Chemical Physics |
Volume | 113 |
Issue number | 6 |
DOIs | |
State | Published - Aug 2000 |
ASJC Scopus subject areas
- General Physics and Astronomy
- Physical and Theoretical Chemistry