Abstraction of atomic hydrogen by atomic deuterium from an amorphous hydrogenated silicon surface

Sumit Agarwal, Akihiro Takano, M. C.M. Van De Sanden, Dimitrios Maroudas, Eray S. Aydil

Research output: Contribution to journalArticle

Abstract

The activation energy barrier for the abstraction of H by D from an a-Si:H surface was determined by carefully deconvoluting from IR spectra the effects of the abstraction reaction from insertion and etching reactions. The abstraction rate was found to be independent of temperature, suggesting that there is no activation energy barrier for the abstraction reaction. The insertion of D into strained Si-Si bonds on the amorphous surface was found to occur at a rate comparable to that for abstraction.

Original languageEnglish (US)
Pages (from-to)10805-10816
Number of pages12
JournalJournal of Chemical Physics
Volume117
Issue number23
DOIs
StatePublished - Dec 15 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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