The activation energy barrier for the abstraction of H by D from an a-Si:H surface was determined by carefully deconvoluting from IR spectra the effects of the abstraction reaction from insertion and etching reactions. The abstraction rate was found to be independent of temperature, suggesting that there is no activation energy barrier for the abstraction reaction. The insertion of D into strained Si-Si bonds on the amorphous surface was found to occur at a rate comparable to that for abstraction.
|Original language||English (US)|
|Number of pages||12|
|Journal||Journal of Chemical Physics|
|State||Published - Dec 15 2002|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry