Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics

D. Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, extensive studies have been conducted [1-5] in order to realize enhancement-mode III-V MOSFETs by improving the interface between gate oxide and III-V channel. The carrier mobility in advanced substrates is generally regarded as a figure of merit in benchmarking high-mobility channel materials against bulk Si substrates. However, charge trapping can be a source of error in mobility calculation using split C-V method for Si MOSFETs with high-k dielectrics [6]. On the other hand, magnetotransport measurements are suitable for direct measurement of inversion charge density (Ninv) and mobility in MOS devices with high-k gate dielectrics, where significant charge trapping makes evaluation of inversion charge density using split C-V method inaccurate. In this work, we employ gated-Hall-bar (GHB) structures to directly measure the inversion charge and mobility in a GaAs MOSFET.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages73-74
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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