TY - GEN
T1 - Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology
AU - Shahrjerdi, D.
AU - Bedell, S. W.
AU - Khakifirooz, A.
AU - Fogel, K.
AU - Lauro, P.
AU - Cheng, K.
AU - Ott, J. A.
AU - Gaynes, M.
AU - Sadana, D. K.
PY - 2012
Y1 - 2012
N2 - We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.
AB - We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.
UR - http://www.scopus.com/inward/record.url?scp=84876138326&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876138326&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2012.6478981
DO - 10.1109/IEDM.2012.6478981
M3 - Conference contribution
AN - SCOPUS:84876138326
SN - 9781467348706
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 5.1.1-5.1.4
BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012
T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012
Y2 - 10 December 2012 through 13 December 2012
ER -