Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology

D. Shahrjerdi, S. W. Bedell, A. Khakifirooz, K. Fogel, P. Lauro, K. Cheng, J. A. Ott, M. Gaynes, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages5.1.1-5.1.4
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology'. Together they form a unique fingerprint.

  • Cite this

    Shahrjerdi, D., Bedell, S. W., Khakifirooz, A., Fogel, K., Lauro, P., Cheng, K., Ott, J. A., Gaynes, M., & Sadana, D. K. (2012). Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 5.1.1-5.1.4). [6478981] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478981