TY - GEN
T1 - Advanced integrated sensor and layer transfer technologies for wearable bioelectronics
AU - Alharbi, A.
AU - Nasri, B.
AU - Wu, T.
AU - Shahrjerdi, D.
PY - 2017/1/31
Y1 - 2017/1/31
N2 - We discuss two emerging technologies that are central for realizing an optically powered flexible bioelectronic system. First, we discuss layer transfer through controlled spalling technology for producing high-performance flexible electronics. We present three examples: (1) advanced-node ultra-thin body silicon integrated circuits on plastic, (2) strain engineering in flexible electronics, and (3) flexible GaAs photovoltaic energy harvesters. Second, a 4-terminal biosensor is presented that is compatible with ultra-thin body silicon CMOS technology. Through in vitro glucose sensing, we demonstrate that the 4-terminal integrated biosensor enables the amplification of biochemical signals at the device level. These advanced technologies can give rise to an unprecedented boost in the performance and functionality of next-generation wearable devices.
AB - We discuss two emerging technologies that are central for realizing an optically powered flexible bioelectronic system. First, we discuss layer transfer through controlled spalling technology for producing high-performance flexible electronics. We present three examples: (1) advanced-node ultra-thin body silicon integrated circuits on plastic, (2) strain engineering in flexible electronics, and (3) flexible GaAs photovoltaic energy harvesters. Second, a 4-terminal biosensor is presented that is compatible with ultra-thin body silicon CMOS technology. Through in vitro glucose sensing, we demonstrate that the 4-terminal integrated biosensor enables the amplification of biochemical signals at the device level. These advanced technologies can give rise to an unprecedented boost in the performance and functionality of next-generation wearable devices.
UR - http://www.scopus.com/inward/record.url?scp=85014476747&partnerID=8YFLogxK
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U2 - 10.1109/IEDM.2016.7838362
DO - 10.1109/IEDM.2016.7838362
M3 - Conference contribution
AN - SCOPUS:85014476747
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 6.5.1-6.5.4
BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 62nd IEEE International Electron Devices Meeting, IEDM 2016
Y2 - 3 December 2016 through 7 December 2016
ER -