An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance

Shaloo Rakheja, Mark S. Lundstrom, Dimitri A. Antoniadis

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor.

Original languageEnglish (US)
Article number7175024
Pages (from-to)2786-2793
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
StatePublished - Sep 1 2015

Keywords

  • III-V HEMTs
  • Si ETSOI
  • carrier degeneracy
  • nonlinear channel-access resistance
  • quantum capacitance
  • quasi-ballistic transport
  • virtual source (VS).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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