An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance

Shaloo Rakheja, Mark S. Lundstrom, Dimitri A. Antoniadis

Research output: Contribution to journal › Article › peer-review

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Engineering & Materials Science