Analysis of Iddq failures by spectral photon emission microscopy

M. Rasras, I. De Wolf, H. Bender, G. Groeseneken, H. E. Maes, S. Vanhaeverbeke, P. De Pauw

Research output: Contribution to journalArticle

Abstract

In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.

Original languageEnglish (US)
Pages (from-to)877-882
Number of pages6
JournalMicroelectronics Reliability
Volume38
Issue number6-8
DOIs
StatePublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Rasras, M., De Wolf, I., Bender, H., Groeseneken, G., Maes, H. E., Vanhaeverbeke, S., & De Pauw, P. (1998). Analysis of Iddq failures by spectral photon emission microscopy. Microelectronics Reliability, 38(6-8), 877-882. https://doi.org/10.1016/s0026-2714(98)00106-1