Analysis of Iddq failures by spectral photon emission microscopy

M. Rasras; I. De Wolf; H. Bender; G. Groeseneken; H. E. Maes; S. Vanhaeverbeke; P. De Pauw

doi:10.1016/s0026-2714(98)00106-1

Analysis of I_ddq failures by spectral photon emission microscopy

M. Rasras, I. De Wolf, H. Bender, G. Groeseneken, H. E. Maes, S. Vanhaeverbeke, P. De Pauw

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, a fast identification of I_ddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the I_ddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.

Original language	English (US)
Pages (from-to)	877-882
Number of pages	6
Journal	Microelectronics Reliability
Volume	38
Issue number	6-8
DOIs	https://doi.org/10.1016/s0026-2714(98)00106-1
State	Published - 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/s0026-2714(98)00106-1

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title = "Analysis of Iddq failures by spectral photon emission microscopy",

abstract = "In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.",

author = "M. Rasras and {De Wolf}, I. and H. Bender and G. Groeseneken and Maes, {H. E.} and S. Vanhaeverbeke and {De Pauw}, P.",

year = "1998",

doi = "10.1016/s0026-2714(98)00106-1",

language = "English (US)",

volume = "38",

pages = "877--882",

journal = "Microelectronics Reliability",

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T1 - Analysis of Iddq failures by spectral photon emission microscopy

AU - Rasras, M.

AU - De Wolf, I.

AU - Bender, H.

AU - Groeseneken, G.

AU - Maes, H. E.

AU - Vanhaeverbeke, S.

AU - De Pauw, P.

PY - 1998

Y1 - 1998

N2 - In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.

AB - In this work, a fast identification of Iddq failures using spectroscopic photon emission microscopy (SPEMMI) is proposed. The spectra obtained from failure sites on the Iddq failed chips were compared with the ones of known defective components. Four distinguishable spectra categories were identified. They were attributed to gate oxide breakdown, metal shorts, blackbody radiation, and ESD caused junction spiking. The focused ion beam (FIB) technique was used to look at the damage sites for confirmation of the SPEMMI results.

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U2 - 10.1016/s0026-2714(98)00106-1

DO - 10.1016/s0026-2714(98)00106-1

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SN - 0026-2714

VL - 38

SP - 877

EP - 882

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 6-8

ER -

Analysis of I_ddq failures by spectral photon emission microscopy

Abstract

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