Anomalous Hall effect in polycrystalline Ni films

Z. B. Guo, W. B. Mi, Q. Zhang, B. Zhang, R. O. Aboljadayel, X. X. Zhang

Research output: Contribution to journalArticlepeer-review

Abstract

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.

Original languageEnglish (US)
Pages (from-to)220-224
Number of pages5
JournalSolid State Communications
Volume152
Issue number3
DOIs
StatePublished - Feb 2012

Keywords

  • A. Magnetic films
  • D. Anomalous Hall effect

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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