Anomalous Hall effect in polycrystalline Ni films

Z. B. Guo; W. B. Mi; Q. Zhang; B. Zhang; R. O. Aboljadayel; X. X. Zhang

doi:10.1016/j.ssc.2011.10.039

Anomalous Hall effect in polycrystalline Ni films

Z. B. Guo, W. B. Mi, Q. Zhang, B. Zhang, R. O. Aboljadayel, X. X. Zhang

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Abstract

We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.

Original language	English (US)
Pages (from-to)	220-224
Number of pages	5
Journal	Solid State Communications
Volume	152
Issue number	3
DOIs	https://doi.org/10.1016/j.ssc.2011.10.039
State	Published - Feb 2012

Keywords

A. Magnetic films
D. Anomalous Hall effect

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2011.10.039

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abstract = "We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.",

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AU - Guo, Z. B.

AU - Mi, W. B.

AU - Zhang, Q.

AU - Zhang, B.

AU - Aboljadayel, R. O.

AU - Zhang, X. X.

PY - 2012/2

Y1 - 2012/2

N2 - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.

AB - We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well.

KW - A. Magnetic films

KW - D. Anomalous Hall effect

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SP - 220

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JO - Solid State Communications

JF - Solid State Communications

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ER -

Anomalous Hall effect in polycrystalline Ni films

Abstract

Keywords

ASJC Scopus subject areas

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