@inproceedings{bbfe94394f5f4db1aeb7e15f11e84eff,
title = "Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates",
abstract = "We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4% on n-type c-Si substrates.",
keywords = "heterojunction solar cells, plasma CVD, silicon",
author = "Bahman Hekmatshoar and Davood Shahrjerdi and Sadana, {Devendra K.}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925075",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "971--972",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}