Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates

Bahman Hekmatshoar, Davood Shahrjerdi, Devendra K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4% on n-type c-Si substrates.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages971-972
Number of pages2
ISBN (Electronic)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Keywords

  • heterojunction solar cells
  • plasma CVD
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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