Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

Zhihui Cheng; Chin Sheng Pang; Peiqi Wang; Son T. Le; Yanqing Wu; Davood Shahrjerdi; Iuliana Radu; Max C. Lemme; Lian Mao Peng; Xiangfeng Duan; Zhihong Chen; Joerg Appenzeller; Steven J. Koester; Eric Pop; Aaron D. Franklin; Curt A. Richter

doi:10.1038/s41928-022-00839-2

Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

Zhihui Cheng, Chin Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Electrical and Computer Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

In the version of this article initially published, the first entry in Table 2 referred to the carrier density of I_max, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same n_s,” which has been removed, and the Fig. 3b caption starting “Benchmarking I_sat versus n” has been altered to read “versus n_s.” Additionally, the Supplementary information has been updated after the phrase “carrier densities at which I_min is extracted” was removed from Note S1 and the Fig. S1 caption. The clarifications have been made in the HTML and PDF versions of the article.

Original language	English (US)
Pages (from-to)	620
Number of pages	1
Journal	Nature Electronics
Volume	5
Issue number	9
DOIs	https://doi.org/10.1038/s41928-022-00839-2
State	Published - Sep 2022

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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10.1038/s41928-022-00839-2

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Cheng, Z., Pang, C. S., Wang, P., Le, S. T., Wu, Y., Shahrjerdi, D., Radu, I., Lemme, M. C., Peng, L. M., Duan, X., Chen, Z., Appenzeller, J., Koester, S. J., Pop, E., Franklin, A. D., & Richter, C. A. (2022). Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8). Nature Electronics, 5(9), 620. https://doi.org/10.1038/s41928-022-00839-2

Cheng, Z, Pang, CS, Wang, P, Le, ST, Wu, Y, Shahrjerdi, D, Radu, I, Lemme, MC, Peng, LM, Duan, X, Chen, Z, Appenzeller, J, Koester, SJ, Pop, E, Franklin, AD & Richter, CA 2022, 'Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)', Nature Electronics, vol. 5, no. 9, pp. 620. https://doi.org/10.1038/s41928-022-00839-2

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title = "Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)",

abstract = "In the version of this article initially published, the first entry in Table 2 referred to the carrier density of Imax, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same ns,” which has been removed, and the Fig. 3b caption starting “Benchmarking Isat versus n” has been altered to read “versus ns.” Additionally, the Supplementary information has been updated after the phrase “carrier densities at which Imin is extracted” was removed from Note S1 and the Fig. S1 caption. The clarifications have been made in the HTML and PDF versions of the article.",

author = "Zhihui Cheng and Pang, {Chin Sheng} and Peiqi Wang and Le, {Son T.} and Yanqing Wu and Davood Shahrjerdi and Iuliana Radu and Lemme, {Max C.} and Peng, {Lian Mao} and Xiangfeng Duan and Zhihong Chen and Joerg Appenzeller and Koester, {Steven J.} and Eric Pop and Franklin, {Aaron D.} and Richter, {Curt A.}",

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AU - Cheng, Zhihui

AU - Pang, Chin Sheng

AU - Wang, Peiqi

AU - Le, Son T.

AU - Wu, Yanqing

AU - Shahrjerdi, Davood

AU - Radu, Iuliana

AU - Lemme, Max C.

AU - Peng, Lian Mao

AU - Duan, Xiangfeng

AU - Chen, Zhihong

AU - Appenzeller, Joerg

AU - Koester, Steven J.

AU - Pop, Eric

AU - Franklin, Aaron D.

AU - Richter, Curt A.

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AB - In the version of this article initially published, the first entry in Table 2 referred to the carrier density of Imax, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same ns,” which has been removed, and the Fig. 3b caption starting “Benchmarking Isat versus n” has been altered to read “versus ns.” Additionally, the Supplementary information has been updated after the phrase “carrier densities at which Imin is extracted” was removed from Note S1 and the Fig. S1 caption. The clarifications have been made in the HTML and PDF versions of the article.

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Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

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