Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8)

Zhihui Cheng, Chin Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Research output: Contribution to journalComment/debatepeer-review

Abstract

In the version of this article initially published, the first entry in Table 2 referred to the carrier density of Imax, which has since been deleted. The Fig. 3a caption, third sentence, contained “not at the same ns,” which has been removed, and the Fig. 3b caption starting “Benchmarking Isat versus n” has been altered to read “versus ns.” Additionally, the Supplementary information has been updated after the phrase “carrier densities at which Imin is extracted” was removed from Note S1 and the Fig. S1 caption.

Original languageEnglish (US)
JournalNature Electronics
DOIs
StateAccepted/In press - 2022

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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