Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells

Sreejith Karthikeyan; Mandip Sibakoti; Richard Liptak; Sang Ho Song; Joel Abrahamson; Eray S. Aydil; Stephen A. Campbell

doi:10.1109/PVSC.2014.6925232

Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells

Sreejith Karthikeyan, Mandip Sibakoti, Richard Liptak, Sang Ho Song, Joel Abrahamson, Eray S. Aydil, Stephen A. Campbell

Chemical and Biomolecular Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1632-1634
Number of pages	3
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6925232
State	Published - Oct 15 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	6/8/14 → 6/13/14

Keywords

CIAGS solar cells
tandem solar cells
wide band gap absorber layer

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6925232

Cite this

Karthikeyan, S., Sibakoti, M., Liptak, R., Song, S. H., Abrahamson, J., Aydil, E. S., & Campbell, S. A. (2014). Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1632-1634). Article 6925232 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925232

Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells. / Karthikeyan, Sreejith; Sibakoti, Mandip; Liptak, Richard et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1632-1634 6925232 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Karthikeyan, S, Sibakoti, M, Liptak, R, Song, SH, Abrahamson, J, Aydil, ES & Campbell, SA 2014, Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925232, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 1632-1634, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925232

Karthikeyan S, Sibakoti M, Liptak R, Song SH, Abrahamson J, Aydil ES et al. Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1632-1634. 6925232. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6925232

Karthikeyan, Sreejith ; Sibakoti, Mandip ; Liptak, Richard et al. / Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1632-1634 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

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abstract = "Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.",

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AU - Song, Sang Ho

AU - Abrahamson, Joel

AU - Aydil, Eray S.

AU - Campbell, Stephen A.

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N2 - Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.

AB - Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.

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Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells

Abstract

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Keywords

ASJC Scopus subject areas

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