TY - GEN
T1 - Challenges in deposition of wide band gap copper indium aluminum gallium selenide (CIAGS) thin films for tandem solar cells
AU - Karthikeyan, Sreejith
AU - Sibakoti, Mandip
AU - Liptak, Richard
AU - Song, Sang Ho
AU - Abrahamson, Joel
AU - Aydil, Eray S.
AU - Campbell, Stephen A.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.
AB - Copper indium gallium diselenide (CIGS) based solar cells have shown efficiencies > 20% on the lab scale and are already in commercial production. Even though the optimal band gap of 1.6 eV to 1.7 eV can be achieved by increasing the Ga content, these solar cells show a maximum efficiency at ∼1.3 eV and any further increase in the Ga concentration and band gap results in lower efficiencies due to bulk and interfacial traps. This also prevents the use of wide band gap CIGS layer as a top cell for harvesting the solar cell spectrum in a tandem cell configuration. This paper reports the manufacturing challenges on the production of wide band gap aluminum doped CIGS layers (CIAGS) and devices fabricated using this material. We have fabricated 11.3% efficient solar cells using the CIAGS absorber layers.
KW - CIAGS solar cells
KW - tandem solar cells
KW - wide band gap absorber layer
UR - http://www.scopus.com/inward/record.url?scp=84912118966&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912118966&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925232
DO - 10.1109/PVSC.2014.6925232
M3 - Conference contribution
AN - SCOPUS:84912118966
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 1632
EP - 1634
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -