Characterization of interlayer interactions in magnetic random access memory layer stacks using ferromagnetic resonance

D. Backes; D. Bedau; H. Liu; J. Langer; A. D. Kent

doi:10.1063/1.3679113

Characterization of interlayer interactions in magnetic random access memory layer stacks using ferromagnetic resonance

D. Backes, D. Bedau, H. Liu, J. Langer, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

Ferromagnetic resonance spectroscopy is used to determine magnetic interactions in layer stacks designed for orthogonal spin-transfer magnetic random memory devices. The stacks have layers with different anisotropy directions and coupling, consisting of a perpendicularly magnetized polarizer, an in-plane magnetized free layer, and an in-plane magnetized exchange biased synthetic antiferromagnetic layer. The oscillatory exchange coupling strength in the synthetic antiferromagnet was measured along with its exchange bias. The free layer properties were also determined. It is demonstrated that this one integrated measurement technique is able to provide quantitative measurements of key magnetic parameters in a complex layer stack, which is a prerequisite for high turn-around device materials characterization and optimization.

Original language	English (US)
Article number	07C721
Journal	Journal of Applied Physics
Volume	111
Issue number	7
DOIs	https://doi.org/10.1063/1.3679113
State	Published - Apr 1 2012

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3679113

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abstract = "Ferromagnetic resonance spectroscopy is used to determine magnetic interactions in layer stacks designed for orthogonal spin-transfer magnetic random memory devices. The stacks have layers with different anisotropy directions and coupling, consisting of a perpendicularly magnetized polarizer, an in-plane magnetized free layer, and an in-plane magnetized exchange biased synthetic antiferromagnetic layer. The oscillatory exchange coupling strength in the synthetic antiferromagnet was measured along with its exchange bias. The free layer properties were also determined. It is demonstrated that this one integrated measurement technique is able to provide quantitative measurements of key magnetic parameters in a complex layer stack, which is a prerequisite for high turn-around device materials characterization and optimization.",

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AU - Bedau, D.

AU - Liu, H.

AU - Langer, J.

AU - Kent, A. D.

PY - 2012/4/1

Y1 - 2012/4/1

N2 - Ferromagnetic resonance spectroscopy is used to determine magnetic interactions in layer stacks designed for orthogonal spin-transfer magnetic random memory devices. The stacks have layers with different anisotropy directions and coupling, consisting of a perpendicularly magnetized polarizer, an in-plane magnetized free layer, and an in-plane magnetized exchange biased synthetic antiferromagnetic layer. The oscillatory exchange coupling strength in the synthetic antiferromagnet was measured along with its exchange bias. The free layer properties were also determined. It is demonstrated that this one integrated measurement technique is able to provide quantitative measurements of key magnetic parameters in a complex layer stack, which is a prerequisite for high turn-around device materials characterization and optimization.

AB - Ferromagnetic resonance spectroscopy is used to determine magnetic interactions in layer stacks designed for orthogonal spin-transfer magnetic random memory devices. The stacks have layers with different anisotropy directions and coupling, consisting of a perpendicularly magnetized polarizer, an in-plane magnetized free layer, and an in-plane magnetized exchange biased synthetic antiferromagnetic layer. The oscillatory exchange coupling strength in the synthetic antiferromagnet was measured along with its exchange bias. The free layer properties were also determined. It is demonstrated that this one integrated measurement technique is able to provide quantitative measurements of key magnetic parameters in a complex layer stack, which is a prerequisite for high turn-around device materials characterization and optimization.

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Characterization of interlayer interactions in magnetic random access memory layer stacks using ferromagnetic resonance

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