Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Bahman Hekmatshoar; Davood Shahrjerdi; Marinus Hopstaken; John A. Ott; Devendra K. Sadana

doi:10.1063/1.4751339

Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Bahman Hekmatshoar, Davood Shahrjerdi, Marinus Hopstaken, John A. Ott, Devendra K. Sadana

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

Original language	English (US)
Article number	103906
Journal	Applied Physics Letters
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.4751339
State	Published - Sep 3 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4751339

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@article{87a1cb248cc249069cebffea7fa9343d,

title = "Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells",

abstract = "We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.",

author = "Bahman Hekmatshoar and Davood Shahrjerdi and Marinus Hopstaken and Ott, {John A.} and Sadana, {Devendra K.}",

year = "2012",

month = sep,

day = "3",

doi = "10.1063/1.4751339",

language = "English (US)",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

AU - Hekmatshoar, Bahman

AU - Shahrjerdi, Davood

AU - Hopstaken, Marinus

AU - Ott, John A.

AU - Sadana, Devendra K.

PY - 2012/9/3

Y1 - 2012/9/3

N2 - We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

AB - We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

UR - http://www.scopus.com/inward/record.url?scp=84866007799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866007799&partnerID=8YFLogxK

U2 - 10.1063/1.4751339

DO - 10.1063/1.4751339

M3 - Article

AN - SCOPUS:84866007799

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103906

ER -

Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

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