Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Bahman Hekmatshoar; Davood Shahrjerdi; Marinus Hopstaken; John A. Ott; Devendra K. Sadana

doi:10.1063/1.4751339

Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Bahman Hekmatshoar, Davood Shahrjerdi, Marinus Hopstaken, John A. Ott, Devendra K. Sadana

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

Original language	English (US)
Article number	103906
Journal	Applied Physics Letters
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.4751339
State	Published - Sep 3 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4751339

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abstract = "We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.",

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AU - Shahrjerdi, Davood

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AU - Ott, John A.

AU - Sadana, Devendra K.

PY - 2012/9/3

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N2 - We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

AB - We report silicon heterojunction solar cells with conversion efficiencies exceeding 21 using appropriately designed emitter structures comprised of highly doped thin epitaxial layers grown by plasma-enhanced chemical vapor deposition at temperatures close to 200 °C. We show that at a given doping concentration, there is an optimum epitaxial layer thickness, above which the conversion efficiency is limited by Auger recombination and bandgap narrowing within the epitaxial layer. In contrast, below the optimum thickness, the conversion efficiency is limited by carrier recombination at the emitter surface of the crystalline silicon substrate.

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Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

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