TY - JOUR
T1 - Charge Transport in Twisted Organic Semiconductor Crystals of Modulated Pitch
AU - Yang, Yongfan
AU - Silva de Moraes, Lygia
AU - Ruzié, Christian
AU - Schweicher, Guillaume
AU - Geerts, Yves Henri
AU - Kennedy, Alan R.
AU - Zhou, Hengyu
AU - Whittaker, St John
AU - Lee, Stephanie S.
AU - Kahr, Bart
AU - Shtukenberg, Alexander G.
N1 - Funding Information:
This work was primarily supported by the National Science Foundation DMR-2003968 and secondarily by the New York University Materials Research Science and Engineering Center (MRSEC) program of the National Science Foundation DMR-1420073. The authors thank Prof. Eray Aydil and Iver J. Cleveland for their help with photoluminescence measurements. The authors also thank Prof. Robert Kohn of the Courant Institute (NYU) for guidance with the conductance modeling. The authors again thank Dr. Shenglong Wang and Song Xia for their assistance with Gaussian and Matlab calculations on the NYU High Performance Computing (HPC) facilities. Use of the Advanced Photon Source at Argonne National Laboratory was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. Y.G. is thankful to the Belgian National Fund for Scientific Research (FNRS) for financial support through research projects: BTBT (Project No. 2.4565.11), Phasetrans (Project No. T.0058.14), Pi-Fast (Project No. T.0072.18), 2D to 3D (Project No. 30489208), and DIFFRA (Project No. U.G001.19). Financial support from the Fédération Wallonie-Bruxelles (ARC No 20061) is also acknowledged. G.S. is a FNRS Research Associate.
Funding Information:
This work was primarily supported by the National Science Foundation DMR‐2003968 and secondarily by the New York University Materials Research Science and Engineering Center (MRSEC) program of the National Science Foundation DMR‐1420073. The authors thank Prof. Eray Aydil and Iver J. Cleveland for their help with photoluminescence measurements. The authors also thank Prof. Robert Kohn of the Courant Institute (NYU) for guidance with the conductance modeling. The authors again thank Dr. Shenglong Wang and Song Xia for their assistance with Gaussian and Matlab calculations on the NYU High Performance Computing (HPC) facilities. Use of the Advanced Photon Source at Argonne National Laboratory was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE‐AC02‐06CH11357. Y.G. is thankful to the Belgian National Fund for Scientific Research (FNRS) for financial support through research projects: BTBT (Project No. 2.4565.11), Phasetrans (Project No. T.0058.14), Pi‐Fast (Project No. T.0072.18), 2D to 3D (Project No. 30489208), and DIFFRA (Project No. U.G001.19). Financial support from the Fédération Wallonie‐Bruxelles (ARC No 20061) is also acknowledged. G.S. is a FNRS Research Associate.
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/9/22
Y1 - 2022/9/22
N2 - Many molecular crystals (approximately one third) grow as twisted, helicoidal ribbons from the melt, and this preponderance is even higher in restricted classes of materials, for instance, charge-transfer complexes. Previously, twisted crystallites of such complexes present an increase in carrier mobilities. Here, the effect of twisting on charge mobility is better analyzed for a monocomponent organic semiconductor, 2,5-bis(3-dodecyl-2-thienyl)-thiazolo[5,4-d]thiazole (BDT), that forms twisted crystals with varied helicoidal pitches and makes possible a correlation of twist strength with carrier mobility. Films are analyzed by X-ray scattering and Mueller matrix polarimetry to characterize the microscale organization of the polycrystalline ensembles. Carrier mobilities of organic field-effect transistors are five times higher when the crystals are grown with the smallest pitches (most twisted), compared to those with the largest pitches, along the fiber elongation direction. A tenfold increase is observed along the perpendicular direction. Simulation of electrical potential based on scanning electron microscopy images and density functional theory suggests that the twisting-enhanced mobility is mainly controlled by the fiber organization in the film. A greater number of tightly packed twisted fibers separated by numerous smaller gaps permit better charge transport over the film surface compared to fewer big crystallites separated by larger gaps.
AB - Many molecular crystals (approximately one third) grow as twisted, helicoidal ribbons from the melt, and this preponderance is even higher in restricted classes of materials, for instance, charge-transfer complexes. Previously, twisted crystallites of such complexes present an increase in carrier mobilities. Here, the effect of twisting on charge mobility is better analyzed for a monocomponent organic semiconductor, 2,5-bis(3-dodecyl-2-thienyl)-thiazolo[5,4-d]thiazole (BDT), that forms twisted crystals with varied helicoidal pitches and makes possible a correlation of twist strength with carrier mobility. Films are analyzed by X-ray scattering and Mueller matrix polarimetry to characterize the microscale organization of the polycrystalline ensembles. Carrier mobilities of organic field-effect transistors are five times higher when the crystals are grown with the smallest pitches (most twisted), compared to those with the largest pitches, along the fiber elongation direction. A tenfold increase is observed along the perpendicular direction. Simulation of electrical potential based on scanning electron microscopy images and density functional theory suggests that the twisting-enhanced mobility is mainly controlled by the fiber organization in the film. A greater number of tightly packed twisted fibers separated by numerous smaller gaps permit better charge transport over the film surface compared to fewer big crystallites separated by larger gaps.
KW - charge transport
KW - crystallite organization
KW - organic semiconductors
KW - twisting morphology
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U2 - 10.1002/adma.202203842
DO - 10.1002/adma.202203842
M3 - Article
AN - SCOPUS:85136469672
SN - 0935-9648
VL - 34
JO - Advanced Materials
JF - Advanced Materials
IS - 38
M1 - 2203842
ER -