Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates

D. Shahrjerdi; D. I. Garcia-Gutierrez; E. Tutuc; S. K. Banerjee

doi:10.1063/1.2937404

Chemical and physical interface studies of the atomic-layer-deposited Al₂O₃ on GaAs substrates

D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, we study the chemical and physical properties of the interface between Al₂O₃ and GaAs for different surface treatments of GaAs. The interfacial layer between the high- κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al₂O₃ on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using N H4 OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.

Original language	English (US)
Article number	223501
Journal	Applied Physics Letters
Volume	92
Issue number	22
DOIs	https://doi.org/10.1063/1.2937404
State	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates",

abstract = "In this work, we study the chemical and physical properties of the interface between Al2O3 and GaAs for different surface treatments of GaAs. The interfacial layer between the high- κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al2O3 on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using N H4 OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.",

author = "D. Shahrjerdi and Garcia-Gutierrez, {D. I.} and E. Tutuc and Banerjee, {S. K.}",

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AU - Shahrjerdi, D.

AU - Garcia-Gutierrez, D. I.

AU - Tutuc, E.

AU - Banerjee, S. K.

N1 - Funding Information: This work was supported in part by DARPA and Micron Foundation.

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Y1 - 2008

N2 - In this work, we study the chemical and physical properties of the interface between Al2O3 and GaAs for different surface treatments of GaAs. The interfacial layer between the high- κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al2O3 on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using N H4 OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.

AB - In this work, we study the chemical and physical properties of the interface between Al2O3 and GaAs for different surface treatments of GaAs. The interfacial layer between the high- κ layer and GaAs substrate was studied using x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The reduction in native oxide layer was observed upon atomic layer deposition of Al2O3 on nontreated GaAs using trimethyl aluminum precursor. It was also observed that the sulfide treatment effectively mitigates the formation of the interfacial layer as compared to the surface hydroxylation using N H4 OH. The electrical characteristics of GaAs capacitors further substantiate the XPS and TEM results.

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Chemical and physical interface studies of the atomic-layer-deposited Al₂O₃ on GaAs substrates

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