Chemically gated electronic structure of a superconducting doped topological insulator system

L. A. Wray, S. Xu, M. Neupane, A. V. Fedorov, Y. S. Hor, R. J. Cava, M. Z. Hasan

    Research output: Contribution to journalConference article

    Abstract

    Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

    Original languageEnglish (US)
    Article number012037
    JournalJournal of Physics: Conference Series
    Volume449
    Issue number1
    DOIs
    StatePublished - 2013
    Event10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012 - Washington, DC, United States
    Duration: Jul 29 2012Aug 3 2012

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Wray, L. A., Xu, S., Neupane, M., Fedorov, A. V., Hor, Y. S., Cava, R. J., & Hasan, M. Z. (2013). Chemically gated electronic structure of a superconducting doped topological insulator system. Journal of Physics: Conference Series, 449(1), [012037]. https://doi.org/10.1088/1742-6596/449/1/012037