Chemically gated electronic structure of a superconducting doped topological insulator system

L. A. Wray; S. Xu; M. Neupane; A. V. Fedorov; Y. S. Hor; R. J. Cava; M. Z. Hasan

doi:10.1088/1742-6596/449/1/012037

Chemically gated electronic structure of a superconducting doped topological insulator system

L. A. Wray, S. Xu, M. Neupane, A. V. Fedorov, Y. S. Hor, R. J. Cava, M. Z. Hasan

Research output: Contribution to journal › Conference article › peer-review

Abstract

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

Original language	English (US)
Article number	012037
Journal	Journal of Physics: Conference Series
Volume	449
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/449/1/012037
State	Published - 2013
Event	10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012 - Washington, DC, United States Duration: Jul 29 2012 → Aug 3 2012

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/449/1/012037

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@article{5945c08eeb50473cbf54ad6b0f52959d,

title = "Chemically gated electronic structure of a superconducting doped topological insulator system",

abstract = "Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.",

author = "Wray, {L. A.} and S. Xu and M. Neupane and Fedorov, {A. V.} and Hor, {Y. S.} and Cava, {R. J.} and Hasan, {M. Z.}",

year = "2013",

doi = "10.1088/1742-6596/449/1/012037",

language = "English (US)",

volume = "449",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012 ; Conference date: 29-07-2012 Through 03-08-2012",

}

TY - JOUR

T1 - Chemically gated electronic structure of a superconducting doped topological insulator system

AU - Wray, L. A.

AU - Xu, S.

AU - Neupane, M.

AU - Fedorov, A. V.

AU - Hor, Y. S.

AU - Cava, R. J.

AU - Hasan, M. Z.

PY - 2013

Y1 - 2013

N2 - Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

AB - Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

UR - http://www.scopus.com/inward/record.url?scp=84883036625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883036625&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/449/1/012037

DO - 10.1088/1742-6596/449/1/012037

M3 - Conference article

AN - SCOPUS:84883036625

SN - 1742-6588

VL - 449

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012037

T2 - 10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012

Y2 - 29 July 2012 through 3 August 2012

ER -

Chemically gated electronic structure of a superconducting doped topological insulator system

Abstract

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