CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization

Douglas M. Gill; Sanjay S. Patel; Mahmoud Rasras; Kun Yii Tu; Alice E. White; Young Kai Chen; Andrew Pomerene; Daniel Carothers; Robert L. Kamocsai; Craig M. Hill; James Beattie

doi:10.1109/JSTQE.2009.2033210

CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization

Douglas M. Gill, Sanjay S. Patel, Mahmoud Rasras, Kun Yii Tu, Alice E. White, Young Kai Chen, Andrew Pomerene, Daniel Carothers, Robert L. Kamocsai, Craig M. Hill, James Beattie

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted MachZehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth 15 GHz in a silicon-based carrier-depletion modulator with a 2-Vcm VπL product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-V_p-p drive in a modulator with a 680-μm optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.

Original language	English (US)
Article number	5325706
Pages (from-to)	45-52
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	16
Issue number	1
DOIs	https://doi.org/10.1109/JSTQE.2009.2033210
State	Published - Jan 2010

Keywords

Electrooptic modulation
Integrated optics
Integrated optoelectronics
Resonators
Ridged waveguides

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2009.2033210

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Gill, D. M., Patel, S. S., Rasras, M., Tu, K. Y., White, A. E., Chen, Y. K., Pomerene, A., Carothers, D., Kamocsai, R. L., Hill, C. M., & Beattie, J. (2010). CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization. IEEE Journal on Selected Topics in Quantum Electronics, 16(1), 45-52. Article 5325706. https://doi.org/10.1109/JSTQE.2009.2033210

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title = "CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization",

abstract = "We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted MachZehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth 15 GHz in a silicon-based carrier-depletion modulator with a 2-Vcm VπL product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-Vp-p drive in a modulator with a 680-μm optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.",

keywords = "Electrooptic modulation, Integrated optics, Integrated optoelectronics, Resonators, Ridged waveguides",

author = "Gill, {Douglas M.} and Patel, {Sanjay S.} and Mahmoud Rasras and Tu, {Kun Yii} and White, {Alice E.} and Chen, {Young Kai} and Andrew Pomerene and Daniel Carothers and Kamocsai, {Robert L.} and Hill, {Craig M.} and James Beattie",

note = "Funding Information: Manuscript received May 21, 2009; revised August 31, 2009. First published November 10, 2009; current version published February 5, 2010. This work was supported by the Defense Advanced Research Projects Agency{\textquoteright}s Electronic/Photonic Integrated Circuit Program.",

year = "2010",

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doi = "10.1109/JSTQE.2009.2033210",

language = "English (US)",

volume = "16",

pages = "45--52",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

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AU - Gill, Douglas M.

AU - Patel, Sanjay S.

AU - Rasras, Mahmoud

AU - Tu, Kun Yii

AU - White, Alice E.

AU - Chen, Young Kai

AU - Pomerene, Andrew

AU - Carothers, Daniel

AU - Kamocsai, Robert L.

AU - Hill, Craig M.

AU - Beattie, James

N1 - Funding Information: Manuscript received May 21, 2009; revised August 31, 2009. First published November 10, 2009; current version published February 5, 2010. This work was supported by the Defense Advanced Research Projects Agency’s Electronic/Photonic Integrated Circuit Program.

PY - 2010/1

Y1 - 2010/1

N2 - We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted MachZehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth 15 GHz in a silicon-based carrier-depletion modulator with a 2-Vcm VπL product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-Vp-p drive in a modulator with a 680-μm optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.

AB - We demonstrate, to the best of our knowledge, the first electrooptic ring-assisted MachZehnder interferometric (RAMZI) modulator in a CMOS-compatible technology. The RAMZI modulator is manufactured on a CMOS-compatible platform and entirely fabricated in a commercial CMOS foundry. We demonstrate a small-signal 3-dB bandwidth 15 GHz in a silicon-based carrier-depletion modulator with a 2-Vcm VπL product, which is approximately two times smaller than previously reported. We achieved a 10-Gb/s eye diagram with a 2-dB extinction ratio using a 4-Vp-p drive in a modulator with a 680-μm optic/RF interaction region. In addition, we demonstrate internal bandwidth equalization within the tunable CMOS-compatible RAMZI modulator, and discuss the optical carrier and modulation sideband response, and relaxation characteristics that lead to this behavior within resonant modulators.

KW - Electrooptic modulation

KW - Integrated optics

KW - Integrated optoelectronics

KW - Resonators

KW - Ridged waveguides

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CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization

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Keywords

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