CMOS silicon receiver integrated with Ge detector and reconfigurable optical filter

Mahmoud S. Rasras, Douglas M. Gill, Mark P. Earnshaw, Christopher R. Doerr, Joseph S. Weiner, Cristian A. Bolle, Young Kai Chen

Research output: Contribution to journalArticle

Abstract

We demonstrate a complmentary metal-oxide-semiconductor (CMOS)-compatible and widely tunable filter with an integrated germanium detector. The filter uses two stages of sixthorder pole-zero filtering cascaded in a vernier fashion to achieve simultaneous tunability and adjustable passband bandwidth from 25 to 50 GHz tuned over a wavelength range >12 nm. The out-ofband crosstalk rejection is ∼ 30 dB. The monolithically integrated detector has a bandwidth of 6 GHz. We also demonstrate a modified detector design which showed a bandwidth of 11 GHz/s and responsivity of 0.75 A/W.

Original languageEnglish (US)
Pages (from-to)112-114
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number2
DOIs
StatePublished - Jan 15 2010

Keywords

  • Bandpass filter
  • High-index-contrast waveguide
  • Optical communications
  • Routing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Rasras, M. S., Gill, D. M., Earnshaw, M. P., Doerr, C. R., Weiner, J. S., Bolle, C. A., & Chen, Y. K. (2010). CMOS silicon receiver integrated with Ge detector and reconfigurable optical filter. IEEE Photonics Technology Letters, 22(2), 112-114. https://doi.org/10.1109/LPT.2009.2036590