Abstract
Broadband and ultra-low crosstalk integrated silicon superlattice waveguides are proposed and demonstrated, enabling high-density waveguide integration. The superlattice waveguides are implemented as S-shaped adiabatic bends that yield ultra-low crosstalks in the neighboring channels, and an extremely low insertion loss, for the TE polarization. Special materials or complex fabrication steps are not required. The bent superlattice waveguides are measured to have an average insertion loss ≤ 0.1 dB for all channels. The average crosstalk values are ≤-37.8 dB and ≤ -45.2 dB, in the first nearest neighboring waveguide and the second nearest neighboring waveguide, respectively. The transmission spectra are measured over the wavelength ranges of (1.24 μm to 1.38 μm) and (1.45 μm to 1.65 μm), covering both communication wavelengths of 1310 and 1550 nm. The simulation results predict an efficient broadband performance over the 500 nm wavelength range (1200 nm to 1700 nm), covering all O, E, S, C, L & U bands. The proof of concept was done for a silicon-on-insulator platform and the approach is applicable to other waveguide geometries and integrated photonic platforms.
Original language | English (US) |
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Article number | 4400109 |
Journal | IEEE Journal of Selected Topics in Quantum Electronics |
Volume | 29 |
Issue number | 6 |
DOIs | |
State | Published - Nov 1 2023 |
Keywords
- Silicon Photonics
- adiabatic
- optical waveguides
- silicon-on-insulator
- superlattices
- transverse electric
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering