TY - GEN
T1 - Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices
AU - Rakheja, S.
AU - Naeemi, A.
PY - 2012
Y1 - 2012
N2 - In this paper, compact semi-empirical models of spin-transport parameters in Si and GaAs as a function of doping concentration, temperature, and size effects are developed. It is found that the room-temperature spin-relaxation length, Ls, in n-type Si degrades from 5 μm at low doping levels to <1 μm for a doping level of 1019 cm3. On the other hand, Ls is 0.5 μm in GaAs at R.T., and it is independent of doping concentration but it degrades as 1/T, where T is the lattice temperature. Using the models of spin-transport parameters, the spin injection and transport efficiency (SITE) in non-local spin-torque (NLST) devices is quantified. It is found that there is an optimal doping concentration in Si that maximizes SITE. In the case of GaAs, SITE improves with increasing doping concentration due to the reduction in the resistivity with doping. The compact spin-transport models developed in this work can be used to estimate the performance and the energy dissipation of the NLST logic.
AB - In this paper, compact semi-empirical models of spin-transport parameters in Si and GaAs as a function of doping concentration, temperature, and size effects are developed. It is found that the room-temperature spin-relaxation length, Ls, in n-type Si degrades from 5 μm at low doping levels to <1 μm for a doping level of 1019 cm3. On the other hand, Ls is 0.5 μm in GaAs at R.T., and it is independent of doping concentration but it degrades as 1/T, where T is the lattice temperature. Using the models of spin-transport parameters, the spin injection and transport efficiency (SITE) in non-local spin-torque (NLST) devices is quantified. It is found that there is an optimal doping concentration in Si that maximizes SITE. In the case of GaAs, SITE improves with increasing doping concentration due to the reduction in the resistivity with doping. The compact spin-transport models developed in this work can be used to estimate the performance and the energy dissipation of the NLST logic.
KW - Doping optimization
KW - Semiconducting interconnects
KW - Spin injection and transport efficiency
KW - Spin logic
KW - Spin torque
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U2 - 10.1109/NANO.2012.6321912
DO - 10.1109/NANO.2012.6321912
M3 - Conference contribution
AN - SCOPUS:84869195332
SN - 9781467321983
T3 - Proceedings of the IEEE Conference on Nanotechnology
BT - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
T2 - 2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Y2 - 20 August 2012 through 23 August 2012
ER -