Conductance of niobium oxide tunnel barriers

D. G. Walmsley, E. L. Wolf, J. W. Osmun

Research output: Contribution to journalArticle

Abstract

The conductance of plasma-grown oxide barriers on niobium films was measured in NbIPb tunnel junctions at 4.2 K and model parameters for the barriers were deduced. Prolonged oxidation leads to greater barrier heights. Oxygen vacancies in the barrier are invoked to explain barrier asymmetry.

Original languageEnglish (US)
Pages (from-to)61-66
Number of pages6
JournalThin Solid Films
Volume62
Issue number1
DOIs
StatePublished - Sep 3 1979

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Walmsley, D. G., Wolf, E. L., & Osmun, J. W. (1979). Conductance of niobium oxide tunnel barriers. Thin Solid Films, 62(1), 61-66. https://doi.org/10.1016/0040-6090(79)90382-1