Abstract
The conductance of plasma-grown oxide barriers on niobium films was measured in NbIPb tunnel junctions at 4.2 K and model parameters for the barriers were deduced. Prolonged oxidation leads to greater barrier heights. Oxygen vacancies in the barrier are invoked to explain barrier asymmetry.
Original language | English (US) |
---|---|
Pages (from-to) | 61-66 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 62 |
Issue number | 1 |
DOIs | |
State | Published - Sep 3 1979 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry