Contact engineering of monolayer CVD MOS2 transistors

Abdullah Alharbi, Davood Shahrjerdi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transition metal dichalcogenides (TMDs) are promising for next-generation electronic and optoelectronic device applications. However, the development of a viable TMD device technology requires an effective strategy for making low-resistance contacts to these materials. In addition, large-area synthesis of low-defect TMD crystals is essential for transforming basic device studies into commercial products. Here, we show large-area synthesis of monolayer (ML) MoS2 using chemical vapor deposition (CVD) with electron mobility of ∼64cm2/V.s at room temperature. We performed contact engineering through a combination of work function engineering and effective n-type doping of MoS2 using engineered sub-stoichiometric HfOx. Our results indicate significant reduction of the contact resistance to ∼480Ω.μm without degrading key transistor properties such as subthreshold swing (∼125mV/dec), mobility (∼64cm2/V.s), and ION/IOFF ratio (>106).

Original languageEnglish (US)
Title of host publication75th Annual Device Research Conference, DRC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509063277
DOIs
StatePublished - Aug 1 2017
Event75th Annual Device Research Conference, DRC 2017 - South Bend, United States
Duration: Jun 25 2017Jun 28 2017

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other75th Annual Device Research Conference, DRC 2017
CountryUnited States
CitySouth Bend
Period6/25/176/28/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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