Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

Prajakta S. Chaudhari, Tejashree M. Bhave, Renu Pasricha, Fouran Singh, D. Kanjilal, S. V. Bhoraskar

Research output: Contribution to journalArticlepeer-review


We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

Original languageEnglish (US)
Pages (from-to)185-190
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number3
StatePublished - Sep 2005


  • Oxide matrix
  • Silicon nanocrystallites
  • Swift heavy ion irradiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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