Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

Prajakta S. Chaudhari; Tejashree M. Bhave; Renu Pasricha; Fouran Singh; D. Kanjilal; S. V. Bhoraskar

doi:10.1016/j.nimb.2005.04.069

Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

Prajakta S. Chaudhari, Tejashree M. Bhave, Renu Pasricha, Fouran Singh, D. Kanjilal, S. V. Bhoraskar

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Abstract

We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO _x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 10¹¹ to 1 × 10¹³ ions/cm². The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiO_x matrix, caused by swift heavy ion irradiation.

Original language	English (US)
Pages (from-to)	185-190
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	239
Issue number	3
DOIs	https://doi.org/10.1016/j.nimb.2005.04.069
State	Published - Sep 2005

Keywords

Oxide matrix
Silicon nanocrystallites
Swift heavy ion irradiation

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2005.04.069

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Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation. / Chaudhari, Prajakta S.; Bhave, Tejashree M.; Pasricha, Renu et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 239, No. 3, 09.2005, p. 185-190.

Research output: Contribution to journal › Article › peer-review

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title = "Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation",

abstract = "We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.",

keywords = "Oxide matrix, Silicon nanocrystallites, Swift heavy ion irradiation",

author = "Chaudhari, {Prajakta S.} and Bhave, {Tejashree M.} and Renu Pasricha and Fouran Singh and D. Kanjilal and Bhoraskar, {S. V.}",

note = "Funding Information: S.V.B. and P.S.C. wish to express thanks to Nuclear Science Centre, New Delhi, India, for providing the financial assistance. Tejashree M. Bhave acknowledges CSIR for Research Associateship.",

year = "2005",

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doi = "10.1016/j.nimb.2005.04.069",

language = "English (US)",

volume = "239",

pages = "185--190",

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T1 - Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

AU - Chaudhari, Prajakta S.

AU - Bhave, Tejashree M.

AU - Pasricha, Renu

AU - Singh, Fouran

AU - Kanjilal, D.

AU - Bhoraskar, S. V.

N1 - Funding Information: S.V.B. and P.S.C. wish to express thanks to Nuclear Science Centre, New Delhi, India, for providing the financial assistance. Tejashree M. Bhave acknowledges CSIR for Research Associateship.

PY - 2005/9

Y1 - 2005/9

N2 - We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

AB - We report the synthesis of silicon nanocrystals grown in silicon oxide matrix by swift heavy ion irradiation. Thin films of silicon oxide (SiO x) are irradiated with 150 MeV silver ions at fluence varying from 5 × 1011 to 1 × 1013 ions/cm2. The variation in the properties of silicon nanocrystals embedded in silicon oxide with varying fluence is studied. The energy of the photoluminescence peak corresponding to the silicon nanocrystals is found to be red shifted with increasing fluence. The trends in the broadening of the X-ray diffraction peak with decreasing fluence supports the controlled growth of silicon nanocrystals in silicon oxide matrix. The crystallite size of nanoclusters of silicon is seen to increase with increasing fluence. The results are discussed in view of the structural transformation, in SiOx matrix, caused by swift heavy ion irradiation.

KW - Oxide matrix

KW - Silicon nanocrystallites

KW - Swift heavy ion irradiation

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JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3

ER -

Controlled growth of silicon nanocrystallites in silicon oxide matrix using 150 MeV Ag ion irradiation

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