Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

Hai Liu; Wyatt Winkenwerder; Yueran Liu; Domingo Ferrer; Davood Shahrjerdi; Scott K. Stanley; John G. Ekerdt; Sanjay K. Banerjee

doi:10.1109/TED.2008.2006889

Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

Hai Liu, Wyatt Winkenwerder, Yueran Liu, Domingo Ferrer, Davood Shahrjerdi, Scott K. Stanley, John G. Ekerdt, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated germanium-silicon (Si/HfSiO_x) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC Flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This (Si/ HfSiO_x) shell layer can separate the Ge NC from HfO₂ and ambient oxidants in the following process, and reduces low-quality GeO_x, HfGeO_x to metallic Ge. Thus, a more robust interface with low trap density between the high-κ dielectric and the NCs was achieved, which helps suppress the charges loss due to trap-assisted tunneling of electrons and results in better device performance.

Original language	English (US)
Pages (from-to)	3610-3614
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	12
DOIs	https://doi.org/10.1109/TED.2008.2006889
State	Published - 2008

Keywords

Germanium-silicon core-shell nanocrystal (NC)
High-quality interface
NC Flash memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2008.2006889

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@article{48b6597539864c4b9e46afae2c651f49,

title = "Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications",

abstract = "We have fabricated germanium-silicon (Si/HfSiOx) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC Flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This (Si/ HfSiOx) shell layer can separate the Ge NC from HfO2 and ambient oxidants in the following process, and reduces low-quality GeOx, HfGeOx to metallic Ge. Thus, a more robust interface with low trap density between the high-κ dielectric and the NCs was achieved, which helps suppress the charges loss due to trap-assisted tunneling of electrons and results in better device performance.",

keywords = "Germanium-silicon core-shell nanocrystal (NC), High-quality interface, NC Flash memory",

author = "Hai Liu and Wyatt Winkenwerder and Yueran Liu and Domingo Ferrer and Davood Shahrjerdi and Stanley, {Scott K.} and Ekerdt, {John G.} and Banerjee, {Sanjay K.}",

note = "Funding Information: Manuscript received May 8, 2008; revised September 22, 2008. Current version published November 26, 2008. This work was supported in part by DARPA-MARCO-MSD, by NSF, by Micron and DOE, and by Welch Foundation under Grant F1502. The review of this brief was arranged by Editor H. Jaouen.",

year = "2008",

doi = "10.1109/TED.2008.2006889",

language = "English (US)",

volume = "55",

pages = "3610--3614",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

AU - Liu, Hai

AU - Winkenwerder, Wyatt

AU - Liu, Yueran

AU - Ferrer, Domingo

AU - Shahrjerdi, Davood

AU - Stanley, Scott K.

AU - Ekerdt, John G.

AU - Banerjee, Sanjay K.

N1 - Funding Information: Manuscript received May 8, 2008; revised September 22, 2008. Current version published November 26, 2008. This work was supported in part by DARPA-MARCO-MSD, by NSF, by Micron and DOE, and by Welch Foundation under Grant F1502. The review of this brief was arranged by Editor H. Jaouen.

PY - 2008

Y1 - 2008

N2 - We have fabricated germanium-silicon (Si/HfSiOx) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC Flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This (Si/ HfSiOx) shell layer can separate the Ge NC from HfO2 and ambient oxidants in the following process, and reduces low-quality GeOx, HfGeOx to metallic Ge. Thus, a more robust interface with low trap density between the high-κ dielectric and the NCs was achieved, which helps suppress the charges loss due to trap-assisted tunneling of electrons and results in better device performance.

AB - We have fabricated germanium-silicon (Si/HfSiOx) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC Flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This (Si/ HfSiOx) shell layer can separate the Ge NC from HfO2 and ambient oxidants in the following process, and reduces low-quality GeOx, HfGeOx to metallic Ge. Thus, a more robust interface with low trap density between the high-κ dielectric and the NCs was achieved, which helps suppress the charges loss due to trap-assisted tunneling of electrons and results in better device performance.

KW - Germanium-silicon core-shell nanocrystal (NC)

KW - High-quality interface

KW - NC Flash memory

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DO - 10.1109/TED.2008.2006889

M3 - Article

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SN - 0018-9383

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SP - 3610

EP - 3614

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

Abstract

Keywords

ASJC Scopus subject areas

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