Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

Hai Liu, Wyatt Winkenwerder, Yueran Liu, Domingo Ferrer, Davood Shahrjerdi, Scott K. Stanley, John G. Ekerdt, Sanjay K. Banerjee

Research output: Contribution to journalArticle

Abstract

We have fabricated germanium-silicon (Si/HfSiOx) core-shell nanocrystal (NC) structures to work as charge storage nodes in NC Flash memories. This core shell NC structure was made by doing silane annealing treatment before and after Ge NC deposition. This (Si/ HfSiOx) shell layer can separate the Ge NC from HfO2 and ambient oxidants in the following process, and reduces low-quality GeOx, HfGeOx to metallic Ge. Thus, a more robust interface with low trap density between the high-κ dielectric and the NCs was achieved, which helps suppress the charges loss due to trap-assisted tunneling of electrons and results in better device performance.

Original languageEnglish (US)
Pages (from-to)3610-3614
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume55
Issue number12
DOIs
StatePublished - 2008

Keywords

  • Germanium-silicon core-shell nanocrystal (NC)
  • High-quality interface
  • NC Flash memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Liu, H., Winkenwerder, W., Liu, Y., Ferrer, D., Shahrjerdi, D., Stanley, S. K., Ekerdt, J. G., & Banerjee, S. K. (2008). Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications. IEEE Transactions on Electron Devices, 55(12), 3610-3614. https://doi.org/10.1109/TED.2008.2006889