Cost-effective layer transfer by controlled spalling technology

S. W. Bedell, D. Shahrjerdi, K. Fogel, P. Lauro, B. Hekmatshoar, N. Li, J. A. Ott, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Although historically studied as a failure mode, substrate spalling can be transformed into a versatile layer transfer method by carefully controlling the thickness and intrinsic stress of a surface layer, and mechanically guiding the fracture path. This Controlled Spalling process requires no specialized equipment and can be applied to essentially any brittle substrate. We have successfully demonstrated i) device fabrication in Si, Ge, and III-V based materials, ii) removal of fully-processed CMOS circuits, iii) kerffree ingot slicing, iv) 300 mm diameter layer transfer and v) a wide range of other materials such as GaN grown on sapphire.

Original languageEnglish (US)
Title of host publicationSemiconductor Wafer Bonding 12
Subtitle of host publicationScience, Technology, and Applications
Pages315-323
Number of pages9
Edition7
DOIs
StatePublished - 2012
Event12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: Oct 7 2012Oct 12 2012

Publication series

NameECS Transactions
Number7
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
CountryUnited States
CityHonolulu, HI
Period10/7/1210/12/12

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Bedell, S. W., Shahrjerdi, D., Fogel, K., Lauro, P., Hekmatshoar, B., Li, N., Ott, J. A., & Sadana, D. K. (2012). Cost-effective layer transfer by controlled spalling technology. In Semiconductor Wafer Bonding 12: Science, Technology, and Applications (7 ed., pp. 315-323). (ECS Transactions; Vol. 50, No. 7). https://doi.org/10.1149/05007.0315ecst