TY - GEN
T1 - Cost-effective layer transfer by controlled spalling technology
AU - Bedell, S. W.
AU - Shahrjerdi, D.
AU - Fogel, K.
AU - Lauro, P.
AU - Hekmatshoar, B.
AU - Li, N.
AU - Ott, J. A.
AU - Sadana, D. K.
PY - 2013
Y1 - 2013
N2 - Although historically studied as a failure mode, substrate spalling can be transformed into a versatile layer transfer method by carefully controlling the thickness and intrinsic stress of a surface layer, and mechanically guiding the fracture path. This Controlled Spalling process requires no specialized equipment and can be applied to essentially any brittle substrate. We have successfully demonstrated i) device fabrication in Si, Ge, and III-V based materials, ii) removal of fully-processed CMOS circuits, iii) kerffree ingot slicing, iv) 300 mm diameter layer transfer and v) a wide range of other materials such as GaN grown on sapphire.
AB - Although historically studied as a failure mode, substrate spalling can be transformed into a versatile layer transfer method by carefully controlling the thickness and intrinsic stress of a surface layer, and mechanically guiding the fracture path. This Controlled Spalling process requires no specialized equipment and can be applied to essentially any brittle substrate. We have successfully demonstrated i) device fabrication in Si, Ge, and III-V based materials, ii) removal of fully-processed CMOS circuits, iii) kerffree ingot slicing, iv) 300 mm diameter layer transfer and v) a wide range of other materials such as GaN grown on sapphire.
UR - http://www.scopus.com/inward/record.url?scp=84885798097&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885798097&partnerID=8YFLogxK
U2 - 10.1149/05007.0315ecst
DO - 10.1149/05007.0315ecst
M3 - Conference contribution
AN - SCOPUS:84885798097
SN - 9781607683551
T3 - ECS Transactions
SP - 315
EP - 323
BT - Semiconductor Wafer Bonding 12
PB - Electrochemical Society Inc.
T2 - 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -