Current-induced switching in single ferromagenetic layer nanopillar junctions

B. Özyilmaz; A. D. Kent

doi:10.1063/1.2195780

Current-induced switching in single ferromagenetic layer nanopillar junctions

B. Özyilmaz, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

Current-induced magnetization dynamics in asymmetric CuCoCu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, five times greater than the anisotropic magnetoresistance effect. We present an experimentally obtained low field phase diagram of current-induced magnetization dynamics in single ferromagnetic layer pillar junctions.

Original language	English (US)
Article number	162506
Journal	Applied Physics Letters
Volume	88
Issue number	16
DOIs	https://doi.org/10.1063/1.2195780
State	Published - Apr 17 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2195780

Cite this

@article{544284fc7dd446e1b9773e67ce4977ee,

title = "Current-induced switching in single ferromagenetic layer nanopillar junctions",

abstract = "Current-induced magnetization dynamics in asymmetric CuCoCu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, five times greater than the anisotropic magnetoresistance effect. We present an experimentally obtained low field phase diagram of current-induced magnetization dynamics in single ferromagnetic layer pillar junctions.",

author = "B. {\"O}zyilmaz and Kent, {A. D.}",

note = "Funding Information: This research was supported by NSF-DMR-0405620. The authors thank Sangtian Liu for useful discussion and Jonathan Z. Sun and Michael J. Rooks for useful comments and fabrication of the nanopillar junctions used in this study. ",

year = "2006",

month = apr,

day = "17",

doi = "10.1063/1.2195780",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Current-induced switching in single ferromagenetic layer nanopillar junctions

AU - Özyilmaz, B.

AU - Kent, A. D.

N1 - Funding Information: This research was supported by NSF-DMR-0405620. The authors thank Sangtian Liu for useful discussion and Jonathan Z. Sun and Michael J. Rooks for useful comments and fabrication of the nanopillar junctions used in this study.

PY - 2006/4/17

Y1 - 2006/4/17

N2 - Current-induced magnetization dynamics in asymmetric CuCoCu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, five times greater than the anisotropic magnetoresistance effect. We present an experimentally obtained low field phase diagram of current-induced magnetization dynamics in single ferromagnetic layer pillar junctions.

AB - Current-induced magnetization dynamics in asymmetric CuCoCu single magnetic layer nanopillars has been studied experimentally at room temperature and in low magnetic fields applied perpendicular to the thin film plane. In sub-100 nm junctions produced using a nanostencil process a bistable state with two distinct resistance values is observed. Current sweeps at fixed applied fields reveal hysteretic and abrupt transitions between these two resistance states. The current induced resistance change is 0.5%, five times greater than the anisotropic magnetoresistance effect. We present an experimentally obtained low field phase diagram of current-induced magnetization dynamics in single ferromagnetic layer pillar junctions.

UR - http://www.scopus.com/inward/record.url?scp=33646196270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646196270&partnerID=8YFLogxK

U2 - 10.1063/1.2195780

DO - 10.1063/1.2195780

M3 - Article

AN - SCOPUS:33646196270

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162506

ER -

Current-induced switching in single ferromagenetic layer nanopillar junctions

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this