Deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si

Saurabh J. Ullal, Harmeet Singh, Vahid Vahedi, Eray S. Aydil

Research output: Contribution to journalArticlepeer-review

Abstract

The deposition of silicon oxychloride films on chamber walls during Cl2/O2 plasma etching of Si was discussed. The Cl content and deposition rate of the films were quantified using the position of the Si-O peak and Si-O and OSi-Cl infrared absorption intensities. It was proposed that the silicon oxychloride film was deposited through oxidation of SiClx molecules adsorbed on the reactor walls.

Original languageEnglish (US)
Pages (from-to)499-506
Number of pages8
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number2
DOIs
StatePublished - Mar 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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