TY - GEN
T1 - Design, analysis and system-level modelling of a single axis capacitive accelerometer
AU - Mohammed, Zakriya
AU - Waheed, Owais Talaat
AU - Elfadel, Ibrahim M.
AU - Chatterjee, Aveek
AU - Rasras, Mahmoud
N1 - Publisher Copyright:
Copyright © 2016 by ASME.
PY - 2016
Y1 - 2016
N2 - The paper demonstrates the design and complete analysis of 1- axis MEMS capacitive accelerometer. The design is optimized for high linearity, high sensitivity, and low cross-axis sensitivity. The noise analysis is done to assure satisfactory performance under operating conditions. This includes the mechanical noise of accelerometer, noise due to interface electronics and noise caused by radiation. The latter noise will arise when such accelerometer is deployed in radioactive (e.g., nuclear power plants) or space environments. The static capacitance is calculated to be 4.58 pF/side. A linear displacement sensitivity of 0.012μm/g (g=9.8m/s2) is observed in the range of ±15g. The differential capacitive sensitivity of the device is 90fF/g. Furthermore, a low cross-axis sensitivity of 0.024fF/g is computed. The effect of radiation is mathematically modelled and possibility of using these devices in radioactive environment is explored. The simulated noise floor of the device with electronic circuit is 0.165mg/Hz1/2.
AB - The paper demonstrates the design and complete analysis of 1- axis MEMS capacitive accelerometer. The design is optimized for high linearity, high sensitivity, and low cross-axis sensitivity. The noise analysis is done to assure satisfactory performance under operating conditions. This includes the mechanical noise of accelerometer, noise due to interface electronics and noise caused by radiation. The latter noise will arise when such accelerometer is deployed in radioactive (e.g., nuclear power plants) or space environments. The static capacitance is calculated to be 4.58 pF/side. A linear displacement sensitivity of 0.012μm/g (g=9.8m/s2) is observed in the range of ±15g. The differential capacitive sensitivity of the device is 90fF/g. Furthermore, a low cross-axis sensitivity of 0.024fF/g is computed. The effect of radiation is mathematically modelled and possibility of using these devices in radioactive environment is explored. The simulated noise floor of the device with electronic circuit is 0.165mg/Hz1/2.
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U2 - 10.1115/IMECE201666004
DO - 10.1115/IMECE201666004
M3 - Conference contribution
AN - SCOPUS:85015867085
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
BT - Micro- and Nano-Systems Engineering and Packaging
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 2016 International Mechanical Engineering Congress and Exposition, IMECE 2016
Y2 - 11 November 2016 through 17 November 2016
ER -