Detection of combinative infrared absorption bands in thin silicon dioxide films

Sang M. Han; Eray S. Aydil

doi:10.1063/1.118424

Detection of combinative infrared absorption bands in thin silicon dioxide films

Sang M. Han, Eray S. Aydil

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO₂ at 1645, 1852, and 2000cm^-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH₄/¹⁸O₂ mixtures proved that combinations of SiO₂ phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO₂ films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

Original language	English (US)
Pages (from-to)	3269-3271
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	24
DOIs	https://doi.org/10.1063/1.118424
State	Published - Jun 16 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.118424

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abstract = "Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.",

author = "Han, {Sang M.} and Aydil, {Eray S.}",

year = "1997",

month = jun,

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doi = "10.1063/1.118424",

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AU - Aydil, Eray S.

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N2 - Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

AB - Multiple total internal reflection Fourier transform infrared spectroscopy is used to detect combinational phonon bands of SiO2 at 1645, 1852, and 2000cm-1 in thin films produced by plasma enhanced chemical vapor deposition. The isotopic shifts of these bands in films deposited from SiH4/18O2 mixtures proved that combinations of SiO2 phonons give rise to the additional absorption peaks. Detection of these combinative phonon bands enables one to use Si multiple total internal reflection crystals for studying Si-O phonon absorptions in SiO2 films on Si. In principle, films as thin as a few angstroms can be detected using the infrared absorption by the combinational bands.

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Detection of combinative infrared absorption bands in thin silicon dioxide films

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