Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity

Z. Q. Yang; G. F. Ding; H. G. Cai; H. Wang; W. Q. Chen; X. L. Zhao

doi:10.1109/SENSOR.2009.5285669

Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity

Z. Q. Yang, G. F. Ding, H. G. Cai, H. Wang, W. Q. Chen, X. L. Zhao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the present work, microswitches with different shapes have been fabricated by low-cost and convenient multi-layer electroplating in order to develop a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. Modal analysis based on FEM shows that the three kinds of new designed microswitches have lower off-axis sensitivity than our previous device, i.e., type I. The packaged microswitches were tested by the drop hammer system. The generated half-sine-like shocking acceleration with amplitude of 80g, lager than the threshold, was applied to the microswitches. The test contact time of the microswitch IV is about 55μs, whose contact effect is much better than conventional. A shock acceleration microswitch ‡W with a movable contact point utilizes the double spring-mass system to realize an enhanced-contact effect and is considered as a better selection for long duration contact and relatively low off-axis sensitivity.

Original language	English (US)
Title of host publication	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	1940-1943
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2009.5285669
State	Published - 2009
Event	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: Jun 21 2009 → Jun 25 2009

Publication series

Name	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country/Territory	United States
City	Denver, CO
Period	6/21/09 → 6/25/09

Keywords

Acceleration microswitch
Enhanced-contact
MEMS

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2009.5285669

Cite this

Yang, Z. Q., Ding, G. F., Cai, H. G., Wang, H., Chen, W. Q., & Zhao, X. L. (2009). Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 1940-1943). Article 5285669 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285669

Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. / Yang, Z. Q.; Ding, G. F.; Cai, H. G. et al.
TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 1940-1943 5285669 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, ZQ, Ding, GF, Cai, HG, Wang, H, Chen, WQ & Zhao, XL 2009, Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. in TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems., 5285669, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 1940-1943, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, CO, United States, 6/21/09. https://doi.org/10.1109/SENSOR.2009.5285669

Yang ZQ, Ding GF, Cai HG, Wang H, Chen WQ, Zhao XL. Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 1940-1943. 5285669. (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). doi: 10.1109/SENSOR.2009.5285669

Yang, Z. Q. ; Ding, G. F. ; Cai, H. G. et al. / Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. pp. 1940-1943 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

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AU - Yang, Z. Q.

AU - Ding, G. F.

AU - Cai, H. G.

AU - Wang, H.

AU - Chen, W. Q.

AU - Zhao, X. L.

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N2 - In the present work, microswitches with different shapes have been fabricated by low-cost and convenient multi-layer electroplating in order to develop a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. Modal analysis based on FEM shows that the three kinds of new designed microswitches have lower off-axis sensitivity than our previous device, i.e., type I. The packaged microswitches were tested by the drop hammer system. The generated half-sine-like shocking acceleration with amplitude of 80g, lager than the threshold, was applied to the microswitches. The test contact time of the microswitch IV is about 55μs, whose contact effect is much better than conventional. A shock acceleration microswitch ‡W with a movable contact point utilizes the double spring-mass system to realize an enhanced-contact effect and is considered as a better selection for long duration contact and relatively low off-axis sensitivity.

AB - In the present work, microswitches with different shapes have been fabricated by low-cost and convenient multi-layer electroplating in order to develop a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity. Modal analysis based on FEM shows that the three kinds of new designed microswitches have lower off-axis sensitivity than our previous device, i.e., type I. The packaged microswitches were tested by the drop hammer system. The generated half-sine-like shocking acceleration with amplitude of 80g, lager than the threshold, was applied to the microswitches. The test contact time of the microswitch IV is about 55μs, whose contact effect is much better than conventional. A shock acceleration microswitch ‡W with a movable contact point utilizes the double spring-mass system to realize an enhanced-contact effect and is considered as a better selection for long duration contact and relatively low off-axis sensitivity.

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KW - Enhanced-contact

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ER -

Development of a shock acceleration microswitch with enhanced-contact and low off-axis sensitivity

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Keywords

ASJC Scopus subject areas

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