@inproceedings{9e3cbc8ad1994dbfa5217941b52ea726,
title = "Direct growth of thin Ge-on-Si layer at low temperature as a template for lattice matched GaAs based solar cells",
abstract = " We present a growth mechanism of low temperature thin Ge films directly grown on Si substrate for GaAs based solar cells. The Ge films are grown using RF-PECVD and their structural, electrical and optical properties are tested in order to use them as a template for III-V growth. A two-step temperature technique and different GeH 4 flow rates have been employed during the deposition process. Our optimized growth limits the defect nucleation or dislocation misfit to 50 nm at the Si/Ge interface. Morever, the measured threading dislocation density (TDD) of 700 nm thick Ge films is 1×106 cm -2 which paves the way to achieve high quality growth of GaAs for solar cells.",
keywords = "GaAs solar cell, Ge-on-Si, low temperature",
author = "Ghada Dushaq and Aamenah Siddiqui and Khadija Jumaa and Ammar Nayfeh and Mahmoud Rasras",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",
year = "2018",
month = nov,
day = "26",
doi = "10.1109/PVSC.2018.8547737",
language = "English (US)",
series = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3857--3860",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",
}