Direct measurement of inversion charge density in enhancement-mode GaAs and InP field-effect transistors with AI203 gate dielectric using gated-hall-bar-structures

Davood Shahrjerdi; B. Hekmatshoar; J. Nah; Emanuel Tutuc; Sanjay K. Banerjee

Direct measurement of inversion charge density in enhancement-mode GaAs and InP field-effect transistors with AI203 gate dielectric using gated-hall-bar-structures

Davood Shahrjerdi, B. Hekmatshoar, J. Nah, Emanuel Tutuc, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Material Research Society Spring Meeting, 2011
State	Published - 2011

Cite this

@inproceedings{a283f1da01a4420a9400f7d5dae2ff35,

title = "Direct measurement of inversion charge density in enhancement-mode GaAs and InP field-effect transistors with AI203 gate dielectric using gated-hall-bar-structures",

author = "Davood Shahrjerdi and B. Hekmatshoar and J. Nah and Emanuel Tutuc and Banerjee, {Sanjay K.}",

year = "2011",

language = "English (US)",

booktitle = "Material Research Society Spring Meeting, 2011",

}

TY - GEN

T1 - Direct measurement of inversion charge density in enhancement-mode GaAs and InP field-effect transistors with AI203 gate dielectric using gated-hall-bar-structures

AU - Shahrjerdi, Davood

AU - Hekmatshoar, B.

AU - Nah, J.

AU - Tutuc, Emanuel

AU - Banerjee, Sanjay K.

PY - 2011

Y1 - 2011

M3 - Conference contribution

BT - Material Research Society Spring Meeting, 2011

ER -