Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures

Ghada H. Dushaq; Mahmoud S. Rasras; Ammar M. Nayfeh

doi:10.1016/j.materresbull.2016.10.032

Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures

Ghada H. Dushaq, Mahmoud S. Rasras, Ammar M. Nayfeh

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, electrophoretic method (EPD) is used to deposit 40 nm gold nano-particles (GNPs) on atomic layer deposited (ALD) grown oxides. Ultra-High Resolution Scanning Electron Microscopy (HRSEM) has been used to study the distribution of gold nano-particles on both Al₂O₃ and HfO₂ thin films as a function of dipping time. The results show better distribution and mechanical adhesion of GNPs on top of HfO₂ compared to Al₂O₃. Additionally, metal-oxide-semiconductor (MOS) structures with GNPs embedded within the HfO₂ layers are fabricated. The distribution and coverage of the GNPs are analyzed using hysteresis loop of capacitance-voltage measurements at (1.0 MHz) and by quantifying the threshold voltage shift (ΔVt). Moreover, the distribution of the GNPs as function of dipping time is discussed in terms of the measured ΔVt. The results show an increase in ΔVt with longer dipping time followed by a drop in the ΔVt. Moreover, the Vt shift vs. dipping time indicates changes in the electrophoretic mobility behavior and the final distribution of GNPs on the surface of the HfO₂.

Original language	English (US)
Pages (from-to)	302-307
Number of pages	6
Journal	Materials Research Bulletin
Volume	86
DOIs	https://doi.org/10.1016/j.materresbull.2016.10.032
State	Published - Feb 1 2017

Keywords

A. Nanostructures
A. Thin films
B. Microstructure
B. Plasma deposition
C. Electrochemical measurements
C. Electron microscopy
D. Dielectrics
D. Electrical properties
D. Electrochemical properties
D. Surface properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2016.10.032

Cite this

@article{b43538e722db40ef9f5e00326c4c8238,

title = "Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures",

abstract = "In this paper, electrophoretic method (EPD) is used to deposit 40 nm gold nano-particles (GNPs) on atomic layer deposited (ALD) grown oxides. Ultra-High Resolution Scanning Electron Microscopy (HRSEM) has been used to study the distribution of gold nano-particles on both Al2O3 and HfO2 thin films as a function of dipping time. The results show better distribution and mechanical adhesion of GNPs on top of HfO2 compared to Al2O3. Additionally, metal-oxide-semiconductor (MOS) structures with GNPs embedded within the HfO2 layers are fabricated. The distribution and coverage of the GNPs are analyzed using hysteresis loop of capacitance-voltage measurements at (1.0 MHz) and by quantifying the threshold voltage shift (ΔVt). Moreover, the distribution of the GNPs as function of dipping time is discussed in terms of the measured ΔVt. The results show an increase in ΔVt with longer dipping time followed by a drop in the ΔVt. Moreover, the Vt shift vs. dipping time indicates changes in the electrophoretic mobility behavior and the final distribution of GNPs on the surface of the HfO2.",

keywords = "A. Nanostructures, A. Thin films, B. Microstructure, B. Plasma deposition, C. Electrochemical measurements, C. Electron microscopy, D. Dielectrics, D. Electrical properties, D. Electrochemical properties, D. Surface properties",

author = "Dushaq, {Ghada H.} and Rasras, {Mahmoud S.} and Nayfeh, {Ammar M.}",

note = "Funding Information: This work was supported by the Office of Naval Research Scientific Projects (ONR) [grant # N62909-16-1-203]. Moreover, we gratefully acknowledge financial support for this work provided by Masdar Institute of Science and Technology . Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2017",

month = feb,

day = "1",

doi = "10.1016/j.materresbull.2016.10.032",

language = "English (US)",

volume = "86",

pages = "302--307",

journal = "Materials Research Bulletin",

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TY - JOUR

T1 - Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures

AU - Dushaq, Ghada H.

AU - Rasras, Mahmoud S.

AU - Nayfeh, Ammar M.

N1 - Funding Information: This work was supported by the Office of Naval Research Scientific Projects (ONR) [grant # N62909-16-1-203]. Moreover, we gratefully acknowledge financial support for this work provided by Masdar Institute of Science and Technology . Publisher Copyright: © 2016 Elsevier Ltd

PY - 2017/2/1

Y1 - 2017/2/1

N2 - In this paper, electrophoretic method (EPD) is used to deposit 40 nm gold nano-particles (GNPs) on atomic layer deposited (ALD) grown oxides. Ultra-High Resolution Scanning Electron Microscopy (HRSEM) has been used to study the distribution of gold nano-particles on both Al2O3 and HfO2 thin films as a function of dipping time. The results show better distribution and mechanical adhesion of GNPs on top of HfO2 compared to Al2O3. Additionally, metal-oxide-semiconductor (MOS) structures with GNPs embedded within the HfO2 layers are fabricated. The distribution and coverage of the GNPs are analyzed using hysteresis loop of capacitance-voltage measurements at (1.0 MHz) and by quantifying the threshold voltage shift (ΔVt). Moreover, the distribution of the GNPs as function of dipping time is discussed in terms of the measured ΔVt. The results show an increase in ΔVt with longer dipping time followed by a drop in the ΔVt. Moreover, the Vt shift vs. dipping time indicates changes in the electrophoretic mobility behavior and the final distribution of GNPs on the surface of the HfO2.

AB - In this paper, electrophoretic method (EPD) is used to deposit 40 nm gold nano-particles (GNPs) on atomic layer deposited (ALD) grown oxides. Ultra-High Resolution Scanning Electron Microscopy (HRSEM) has been used to study the distribution of gold nano-particles on both Al2O3 and HfO2 thin films as a function of dipping time. The results show better distribution and mechanical adhesion of GNPs on top of HfO2 compared to Al2O3. Additionally, metal-oxide-semiconductor (MOS) structures with GNPs embedded within the HfO2 layers are fabricated. The distribution and coverage of the GNPs are analyzed using hysteresis loop of capacitance-voltage measurements at (1.0 MHz) and by quantifying the threshold voltage shift (ΔVt). Moreover, the distribution of the GNPs as function of dipping time is discussed in terms of the measured ΔVt. The results show an increase in ΔVt with longer dipping time followed by a drop in the ΔVt. Moreover, the Vt shift vs. dipping time indicates changes in the electrophoretic mobility behavior and the final distribution of GNPs on the surface of the HfO2.

KW - A. Nanostructures

KW - A. Thin films

KW - B. Microstructure

KW - B. Plasma deposition

KW - C. Electrochemical measurements

KW - C. Electron microscopy

KW - D. Dielectrics

KW - D. Electrical properties

KW - D. Electrochemical properties

KW - D. Surface properties

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U2 - 10.1016/j.materresbull.2016.10.032

DO - 10.1016/j.materresbull.2016.10.032

M3 - Article

AN - SCOPUS:85003545037

SN - 0025-5408

VL - 86

SP - 302

EP - 307

JO - Materials Research Bulletin

JF - Materials Research Bulletin

ER -

Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures

Abstract

Keywords

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