Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films

Y. Suzuki, Yan Wu, J. Yu, U. Ruediger, A. D. Kent, T. K. Nath, C. B. Eom

    Research output: Contribution to journalConference articlepeer-review


    Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 Å. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.

    Original languageEnglish (US)
    Pages (from-to)6746-6748
    Number of pages3
    JournalJournal of Applied Physics
    Issue number9 III
    StatePublished - May 1 2000
    Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
    Duration: Nov 15 1999Nov 18 1999

    ASJC Scopus subject areas

    • General Physics and Astronomy


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