Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films

Y. Suzuki; Yan Wu; J. Yu; U. Ruediger; A. D. Kent; T. K. Nath; C. B. Eom

doi:10.1063/1.372828

Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films

Y. Suzuki, Yan Wu, J. Yu, U. Ruediger, A. D. Kent, T. K. Nath, C. B. Eom

Research output: Contribution to journal › Conference article › peer-review

Abstract

Our studies of compressively strained La_0.7Sr_0.3MnO₇ (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO₃ is not completely relaxed up to thicknesses on the order of 1000 Å. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.

Original language	English (US)
Pages (from-to)	6746-6748
Number of pages	3
Journal	Journal of Applied Physics
Volume	87
Issue number	9 III
DOIs	https://doi.org/10.1063/1.372828
State	Published - May 1 2000
Event	44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States Duration: Nov 15 1999 → Nov 18 1999

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General Physics and Astronomy

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10.1063/1.372828

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title = "Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films",

abstract = "Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 {\AA}. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.",

author = "Y. Suzuki and Yan Wu and J. Yu and U. Ruediger and Kent, {A. D.} and Nath, {T. K.} and Eom, {C. B.}",

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TY - JOUR

T1 - Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films

AU - Suzuki, Y.

AU - Wu, Yan

AU - Yu, J.

AU - Ruediger, U.

AU - Kent, A. D.

AU - Nath, T. K.

AU - Eom, C. B.

PY - 2000/5/1

Y1 - 2000/5/1

N2 - Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 Å. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.

AB - Our studies of compressively strained La0.7Sr0.3MnO7 (LSMO) thin films reveal the importance of domain structure and strain effects in the magnetization reversal and magnetotransport. Normal and grazing incidence x-ray diffraction indicate that the compressive strain on these LSMO thin films on (100) LaAlO3 is not completely relaxed up to thicknesses on the order of 1000 Å. The effect of the compressive strain is evident in the shape of the magnetization loops and the magnetotransport measurements at various temperatures. Although the domain wall contribution to the magnetoresistance is significantly larger than that predicted from a simple double exchange picture, the contribution is a small fraction of the measured magnetoresistance.

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DO - 10.1063/1.372828

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9 III

T2 - 44th Annual Conference on Magnetism and Magnetic Materials

Y2 - 15 November 1999 through 18 November 1999

ER -

Domain structure and magnetotransport in epitaxial colossal magnetoresistance thin films

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