Doping monolayer graphene with single atom substitutions

Hongtao Wang, Qingxiao Wang, Yingchun Cheng, Kun Li, Yingbang Yao, Qiang Zhang, Cezhou Dong, Peng Wang, Udo Schwingenschlögl, Wei Yang, X. X. Zhang

Research output: Contribution to journalArticlepeer-review


Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.

Original languageEnglish (US)
Pages (from-to)141-144
Number of pages4
JournalNano Letters
Issue number1
StatePublished - Jan 11 2012


  • Graphene
  • doping
  • metal-vacancy complex
  • transmission electron microscopy
  • vacancy

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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