The suppression by a magnetic field of the anomalous (Formula presented) conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered (Formula presented) heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator-quantum-Hall-effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-(Formula presented) phase is related only to the electrons’ spin.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics