Abstract
The suppression by a magnetic field of the anomalous (Formula presented) conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered (Formula presented) heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator-quantum-Hall-effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-(Formula presented) phase is related only to the electrons’ spin.
Original language | English (US) |
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Pages (from-to) | 3553-3556 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 58 |
Issue number | 7 |
DOIs | |
State | Published - 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics