Effect of a tilted magnetic field on the anomalous conducting phase in high-mobility Si MOSFET’s

S. Kravchenko, D. Simonian, M. Sarachik, A. Kent

    Research output: Contribution to journalArticle

    Abstract

    The suppression by a magnetic field of the anomalous (Formula presented) conducting phase in high-mobility silicon metal-oxide-semiconductor field-effect transistors is independent of the angle between the field and the plane of the two-dimensional electron system. In the presence of a parallel field large enough to fully quench the anomalous conducting phase, the behavior is similar to that of disordered (Formula presented) heterostructures: the system is insulating in zero (perpendicular) field, and exhibits reentrant insulator-quantum-Hall-effect-insulator transitions as a function of perpendicular field. The results demonstrate that the suppression of the low-(Formula presented) phase is related only to the electrons’ spin.

    Original languageEnglish (US)
    Pages (from-to)3553-3556
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume58
    Issue number7
    DOIs
    StatePublished - Jan 1 1998

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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