Effect of radiation damage on the charge-density-wave dynamics in NbSe3

W. W. Fuller, G. Gr̈ner, P. M. Chaikin, N. P. Ong

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have used 2.5-MeV protons to produce radiation damage in NbSe3, in a homogeneous controlled manner. The defect concentration was varied from 10 to 500 ppm in order to study the effects of pinning on the charge-density-wave motion. Measurements were made of the nonlinear conductivity, the threshold electric field, and the dielectric constant and conductivity as a function of frequency in the range 0-100 MHz. We find that the threshold field and the reciprocal dielectric constant vary linearly with the defect concentration and hence the restoring force.

    Original languageEnglish (US)
    Pages (from-to)6259-6264
    Number of pages6
    JournalPhysical Review B
    Volume23
    Issue number12
    DOIs
    StatePublished - 1981

    ASJC Scopus subject areas

    • Condensed Matter Physics

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