Effect of substrate coupling on the performance and variability of monolayer MoS2 Transistors

Abdullah Alharbi; Zhujun Huang; Takashi Taniguchi; Kenji Watanabe; Davood Shahrjerdi

doi:10.1109/LED.2018.2883808

Effect of substrate coupling on the performance and variability of monolayer MoS₂ Transistors

Abdullah Alharbi, Zhujun Huang, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS₂ field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS₂ FETs.

Original language	English (US)
Article number	8550703
Pages (from-to)	135-138
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	1
DOIs	https://doi.org/10.1109/LED.2018.2883808
State	Published - Jan 2019

Keywords

FET
MoS
interfacial energy
variability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2018.2883808

Cite this

@article{106655c07108461c88b1bdc1bd3dc5e1,

title = "Effect of substrate coupling on the performance and variability of monolayer MoS2 Transistors",

abstract = "We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs.",

keywords = "FET, MoS, interfacial energy, variability",

author = "Abdullah Alharbi and Zhujun Huang and Takashi Taniguchi and Kenji Watanabe and Davood Shahrjerdi",

note = "Funding Information: This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704. Funding Information: Manuscript received October 31, 2018; accepted November 22, 2018. Date of publication November 28, 2018; date of current version January 9, 2019. This work was supported in part by NSF under Grant ECCS-1638598 and Grant MRI-1531664 and in part by the Gordon and Betty Moore Foundation under Grant GBMF 4838. The review of this letter was arranged by Editor Z. Chen. (Corresponding author: Davood Shahrjerdi.) A. Alharbi, Z. Huang, and D. Shahrjerdi are with the Department of Electrical and Computer Engineering, New York University, Brooklyn, NY 11201 USA (e-mail: [email protected]). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = jan,

doi = "10.1109/LED.2018.2883808",

language = "English (US)",

volume = "40",

pages = "135--138",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Effect of substrate coupling on the performance and variability of monolayer MoS2 Transistors

AU - Alharbi, Abdullah

AU - Huang, Zhujun

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Shahrjerdi, Davood

N1 - Funding Information: This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704. Funding Information: Manuscript received October 31, 2018; accepted November 22, 2018. Date of publication November 28, 2018; date of current version January 9, 2019. This work was supported in part by NSF under Grant ECCS-1638598 and Grant MRI-1531664 and in part by the Gordon and Betty Moore Foundation under Grant GBMF 4838. The review of this letter was arranged by Editor Z. Chen. (Corresponding author: Davood Shahrjerdi.) A. Alharbi, Z. Huang, and D. Shahrjerdi are with the Department of Electrical and Computer Engineering, New York University, Brooklyn, NY 11201 USA (e-mail: [email protected]). Publisher Copyright: © 1980-2012 IEEE.

PY - 2019/1

Y1 - 2019/1

N2 - We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs.

AB - We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs.

KW - FET

KW - MoS

KW - interfacial energy

KW - variability

UR - http://www.scopus.com/inward/record.url?scp=85057784882&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85057784882&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2883808

DO - 10.1109/LED.2018.2883808

M3 - Article

AN - SCOPUS:85057784882

SN - 0741-3106

VL - 40

SP - 135

EP - 138

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 8550703

ER -