Effect of substrate coupling on the performance and variability of monolayer MoS2 Transistors

Abdullah Alharbi, Zhujun Huang, Takashi Taniguchi, Kenji Watanabe, Davood Shahrjerdi

Research output: Contribution to journalArticle

Abstract

We study the effect of substrate coupling on the variability and the device characteristics of monolayer MoS2 field-effect transistors (FETs). Our electrical measurement results reveal significant improvements of key FET device metrics and marked reduction of device variability with reducing the interfacial energy. We attribute the observed improvements of the device characteristics to the reduction of the interface trap density and the suppression of the charged impurity scattering. This study establishes the critical role of substrate coupling on the performance and variability of monolayer MoS2 FETs.

Original languageEnglish (US)
Article number8550703
Pages (from-to)135-138
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number1
DOIs
StatePublished - Jan 2019

    Fingerprint

Keywords

  • FET
  • MoS
  • interfacial energy
  • variability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this